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浏览/检索结果: 共63条，第1-10条 帮助 限定条件 发表日期：2001    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Variational calculations of ionized-donor-bound excitons in GaAs-AlxGa1-xAs quantum wells 期刊论文 european physical journal b, 2001, 卷号: 19, 期号: 1, 页码: 17-20 Liu JJ; Zhang SF; Li YX; Kong XJ 收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12 BINDING-ENERGY  2-DIMENSIONAL SEMICONDUCTORS  NEUTRAL DONORS  BIEXCITONS  PHOTOLUMINESCENCE  IMPURITY   Potential light source for photonic integrated circuits based on the equilateral triangle resonator 会议论文 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 作者:  Yu LJ 收藏  |  浏览/下载：54/0  |  提交时间：2010/10/29 microlasers  finite-difference time-domain technique  semiconductor laser  optical resonator  DIRECTIONAL EMISSION  MICROLASERS   Photoluminescence from carbon nanotubes 会议论文 25th international conference on the physics of semiconductors (icps25), osaka, japan, sep 17-22, 2000 Han HX; Li GH; Ge WK; Wang ZP; Xu ZY; Xie SS; Chang BH; Sun LF; Wang BS; Xu G; Su ZB 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 ELECTRONIC-STRUCTURE   Epitaxial growth of SiC on complex substrates 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Sun GS; Li JM; Luo MC; Zhu SR; Wang L; Zhang FF; Lin LY 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/15 optical microscopy  X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  SAPPHIRE  DEPOSITION  FILMS   Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  LOW-TEMPERATURE GROWTH  FILMS   Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy 期刊论文 journal of crystal growth, 2001, 卷号: 223, 期号: 4, 页码: 518-522 作者:  Xu B 收藏  |  浏览/下载：105/8  |  提交时间：2010/08/12 molecular beam epitaxy  semiconductor III-V materials  QUANTUM DOTS  SURFACE-MORPHOLOGY  LOW-THRESHOLD  INP  INP(001)  LUMINESCENCE  ORGANIZATION  ISLANDS  LAYER   High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm 期刊论文 applied physics letters, 2001, 卷号: 79, 期号: 18, 页码: 2868-2870 作者:  Xu B 收藏  |  浏览/下载：215/69  |  提交时间：2010/08/12 TEMPERATURE-DEPENDENCE   Surface acoustic wave velocity and electromechanical coupling coefficient of GaN grown on (0001) sapphire by metal-organic vapour phase epitaxy 期刊论文 chinese physics letters, 2001, 卷号: 18, 期号: 10, 页码: 1418-1419 作者:  Han PD 收藏  |  浏览/下载：84/7  |  提交时间：2010/08/12 THIN-FILMS  DEPOSITION  DIODES   Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots 期刊论文 journal of applied physics, 2001, 卷号: 90, 期号: 4, 页码: 2048-2050 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：100/6  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  LASER-DIODES  PHOTOLUMINESCENCE  THRESHOLD  EMISSION   Determination of the macroscopic optical properties for the NAEC/PEK-c guest-host polymer films 期刊论文 optics and lasers in engineering, 2001, 卷号: 35, 期号: 1, 页码: 19-26 Shi W; Fang CS; Li F; Pan QW; Gu QT; Xu D; Wei HZ; Yu JZ 收藏  |  浏览/下载：87/9  |  提交时间：2010/08/12 polymer film  poling  absorption spectrum  optical properties  CHROMOPHORE