Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy

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	Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy
	Xu B
刊名	journal of crystal growth
	2001
卷号	223 期号:4 页码:518-522
关键词	molecular beam epitaxy semiconductor III-V materials QUANTUM DOTS SURFACE-MORPHOLOGY LOW-THRESHOLD INP INP(001) LUMINESCENCE ORGANIZATION ISLANDS LAYER
ISSN号	0022-0248
通讯作者	li yf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	self-assembled inas nanostructures on (0 0 1) inp substrate have been grown by molecular beam epitaxy (mbe) and evaluated by transmission electron microscopy (tem) and photoluminescence (pl). it is found that the morphologies and pl properties of inas nanostructures depend strongly on the growth condition. for the same buffer layer, elongated inas quantum wires (qwrs) and no isotropic inas quantum dots (qds) can be obtained using different growth conditions. at the same time, for inas quantum dots, pl spectra also show several emission peaks related to different islands size. theoretical calculation indicated that there are size quantization effects in inas islands. (c) 2001 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12260]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy[J]. journal of crystal growth,2001,223(4):518-522.
APA	Xu B.(2001).Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy.journal of crystal growth,223(4),518-522.
MLA	Xu B."Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy".journal of crystal growth 223.4(2001):518-522.