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| Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy 会议论文
9th international symposium on nondestructive characterization of materials, sydney, australia, jun 28-jul 02, 1999
Liu JP; Kong MY; Huang DD; Li JP; Sun DZ
  收藏 | 浏览/下载：9/0 | 提交时间：2010/10/29
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| Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 556-559
Liu JP; Kong MY; Liu XF; Li JP; Huang DD; Li LX; Sun DZ
收藏 | 浏览/下载：32/0 | 提交时间：2010/08/12
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| Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 530-533
Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J
收藏 | 浏览/下载：56/0 | 提交时间：2010/08/12
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| Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J
收藏 | 浏览/下载：14/0 | 提交时间：2010/11/15
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| Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing 会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Liu JP; Kong MY; Liu XF; Li JP; Huang DD; Li LX; Sun DZ
收藏 | 浏览/下载：8/0 | 提交时间：2010/11/15
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| TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy 期刊论文
defect and diffusion forum, 1999, 卷号: 174, 期号: 0, 页码: 59-65
作者: Han PD
收藏 | 浏览/下载：39/0 | 提交时间：2010/08/12
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| High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE) 期刊论文
journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 613-616
Liu JP; Huang DD; Li JP; Sun DZ; Kong MY
收藏 | 浏览/下载：27/0 | 提交时间：2010/08/12
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| Substrate surface atomic structure influence on the growth of InAlAs quantum dots 期刊论文
journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 608-612
作者: Xu B
收藏 | 浏览/下载：36/0 | 提交时间：2010/08/12
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| Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions 期刊论文
mrs internet journal of nitride semiconductor research, 1999, 卷号: 4, 期号: 0, 页码: art.no.g6.4
Ho WY; Fong WK; Surya C; Tong KY; Lu LW; Ge WK
收藏 | 浏览/下载：36/0 | 提交时间：2010/08/12
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