Hot-carrier effects on irradiated deep submicron NMOSFET

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	Hot-carrier effects on irradiated deep submicron NMOSFET
	Cui, Jiangwei; Zheng, Qiwen; Yu, Xuefeng; Cong, Zhongchao; Zhou, Hang; Guo, Qi; Wen, Lin; Wei, Ying; Ren, Diyuan
刊名	Journal of Semiconductors
	2014
卷号	35 期号:7
ISSN号	16744926
英文摘要	We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hot-carrier stress.
收录类别	EI
公开日期	2014-11-11
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/3920]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室新疆理化技术研究所_材料物理与化学研究室
作者单位	Key Laboratory of Functional Materials and Devices under Special Environments, Chinese Academy of Sciences, Xinjiang Technical Institute of Physics and Chemistry, Urumuqi 830011, China;University of Chinese Academy of Sciences, Beijing 100049, China
推荐引用方式 GB/T 7714	Cui, Jiangwei,Zheng, Qiwen,Yu, Xuefeng,et al. Hot-carrier effects on irradiated deep submicron NMOSFET[J]. Journal of Semiconductors,2014,35(7).
APA	Cui, Jiangwei.,Zheng, Qiwen.,Yu, Xuefeng.,Cong, Zhongchao.,Zhou, Hang.,...&Ren, Diyuan.(2014).Hot-carrier effects on irradiated deep submicron NMOSFET.Journal of Semiconductors,35(7).
MLA	Cui, Jiangwei,et al."Hot-carrier effects on irradiated deep submicron NMOSFET".Journal of Semiconductors 35.7(2014).