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	Semiconductor material having si-doped gainp cap layer
	MAEDA SHIGEO; TOYAMA OSAMU; WATABE SHINICHI
	1992-10-05
著作权人	MITSUBISHI CABLE IND LTD
专利号	JP1992278522A
国家	日本
文献子类	发明申请
其他题名	Semiconductor material having si-doped gainp cap layer
英文摘要	PURPOSE:To obtain semiconductor material wherein propagation of a crosshatched pattern and dislocation which are caused by a GaAsP substrate and peculiar to a GaInP layer is prevented, and the ohmic resistance value to an electrode is decreased. CONSTITUTION:GaInP layers 2, 3 and an Si-doped GaInP layer 4 are formed on a GaAsP substrate When a GaInP epitaxial layer 4 doped with Si is formed, a layer of low dislocation density having a flat surface is obtained, and the ohmic property between the Si-doped GaInP layer 4 and an electrode is improved. Hence, when an LED or an LD is formed on the semiconductor material obtained by this invention, the quality and the reliability can remarkably be improved. The above material is especially effective for orange to blue light emitting elements.
公开日期	1992-10-05
申请日期	1991-03-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65771]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI CABLE IND LTD
推荐引用方式 GB/T 7714	MAEDA SHIGEO,TOYAMA OSAMU,WATABE SHINICHI. Semiconductor material having si-doped gainp cap layer. JP1992278522A. 1992-10-05.

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