X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates

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	X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates
	Shen XM ; Wang YT ; Zheng XH ; Zhang BS ; Chen J ; Feng G ; Yang H
刊名	journal of crystal growth
	2003
卷号	254 期号:1-2 页码:23-27
关键词	buffer layers x-ray diffraction metalorganic chemical vapor deposition nitrides VAPOR-PHASE EPITAXY NUCLEATION LAYERS CUBIC GAN (001)GAAS SUBSTRATE STRAIN RELAXATION TEMPERATURE DEPOSITION QUALITY DIODES
ISSN号	0022-0248
通讯作者	shen xm,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china.
中文摘要	in order to understand the growth feature of gan on gaas (0 0 1) substrates grown by metalorganic chemical vapor deposition (mocvd), the crystallinity of gan buffer layers with different thicknesses was investigated by using double crystal x-ray diffraction (dcxrd) measurements. the xrd results showed that the buffer layers consist of predominantly hexagonal gan (h-gan) and its content increases with buffer layer thickness. the nominal gan (111) reflections with chi at 54.74degrees can be detected easily, while (0 0 2) reflections are rather weak. the integrated intensity of reflections from (111) planes is 4-6 times that of (0 0 2) reflections. possible explanations are presented. (c) 2003 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11554]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Shen XM,Wang YT,Zheng XH,et al. X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates[J]. journal of crystal growth,2003,254(1-2):23-27.
APA	Shen XM.,Wang YT.,Zheng XH.,Zhang BS.,Chen J.,...&Yang H.(2003).X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates.journal of crystal growth,254(1-2),23-27.
MLA	Shen XM,et al."X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates".journal of crystal growth 254.1-2(2003):23-27.