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	Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources
	Xu, Tiantong; Tao, Zhi; Lozano, Paulo C.
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	2018
卷号	36
关键词	Etching Glass Ion sources Ionic conduction Ionic liquids Low-k dielectric Silica Silicon oxides 1-ethyl-3-methylimidazolium tetrafluoroborate Dielectric substrates Etching selectivity Fluorine radical Ion-beam applications Ionic liquid ion sources Negatively charged Surface charge accumulations Ion beams
ISSN号	1071-1023
DOI	10.1116/1.5034131
URL标识	查看原文
收录类别	SCIE ; EI
WOS记录号	WOS:000444809600017
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5929960
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Xu, Tiantong,Tao, Zhi,Lozano, Paulo C.. Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2018,36.
APA	Xu, Tiantong,Tao, Zhi,&Lozano, Paulo C..(2018).Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,36.
MLA	Xu, Tiantong,et al."Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 36(2018).

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