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浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Effect of Helium Ion Pre-implantation on Deuterium Retention Behavior in Tungsten 期刊论文 Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2020, 卷号: 49, 期号: 10, 页码: 3498-3504 作者:  Jin, Yuhua;  He, Ran;  Zhang, Xuexi;  Qiao, Li;  Wang, Peng 收藏  |  浏览/下载：18/0  |  提交时间：2022/02/17 Deuterium  Helium  Tungsten  Tungsten metallography  Concentration-depth profile  Deuterium plasma  Deuterium retention  Diffusion depth  Helium bubbles  Ion implanters  Irradiated area  Plasma systems   Irradiance characteristic and design optimization of a new full-spectrum solar simulator 期刊论文 Taiyangneng Xuebao/Acta Energiae Solaris Sinica, 2012, 卷号: 33, 期号: [db:dc_citation_issue], 页码: 73-80 作者:  Meng, Qinglong;  Wang, Yuan 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/10 Irradiance  Irradiance distribution  Irradiated area  LightTools  Operation conditions  Optimization conditions  Solar simulator  System simulation models   Photocatalytic Patterning and Modification of Graphene 期刊论文 journal of the american chemical society, 2011 Zhang, Liming; Diao, Shuo; Nie, Yufeng; Yan, Kai; Liu, Nan; Dai, Boya; Xie, Qin; Reina, Alfonso; Kong, Jing; Liu, Zhongfan 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10 WALLED CARBON NANOTUBES  FEW-LAYER GRAPHENE  UV-IRRADIATED TIO2  LARGE-AREA  REMOTE OXIDATION  GAS-PHASE  NANORIBBONS  FABRICATION  SEMICONDUCTORS  LITHOGRAPHY   Irradiance characteristics and optimization design of a large-scale solar simulator 期刊论文 SOLAR ENERGY, 2011, 卷号: 85, 期号: [db:dc_citation_issue], 页码: 1758-1767 作者:  Meng, Qinglong;  Wang, Yuan;  Zhang, Linhua 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/10 Irradiance  Effective irradiated area  Dysprosium lamp  Solar simulator  LightTools   Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.