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CORC

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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
Synthesis of GaN nanorods with vertebra-like morphology 会议论文
ieee international conference of nano/micro engineered and molecular systems, zhuhai, peoples r china, jan 18-21, 2006
Gao, HY (Gao, Haiyong); Li, JM (Li, Jinmin)
收藏  |  浏览/下载：112/30  |  提交时间：2010/03/29
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
作者:  Zhang SM
收藏  |  浏览/下载：292/3  |  提交时间：2010/08/12
Statistical investigation on morphology development of gallium nitride in initial growth stage 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 77-84
Yuan HR; Lu DC; Liu XL; Chen Z; Han P; Wang XH; Wang D
收藏  |  浏览/下载：76/3  |  提交时间：2010/08/12
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping 期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
作者:  Zhang SM
收藏  |  浏览/下载：92/4  |  提交时间：2010/08/12
Indium doping effect on GaN in the initial growth stage 期刊论文
journal of electronic materials, 2001, 卷号: 30, 期号: 8, 页码: 977-979
作者:  Han PD
收藏  |  浏览/下载：154/29  |  提交时间：2010/08/12
High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE) 期刊论文
journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 613-616
Liu JP; Huang DD; Li JP; Sun DZ; Kong MY
收藏  |  浏览/下载：27/0  |  提交时间：2010/08/12
Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates 期刊论文
science in china series e-technological sciences, 1998, 卷号: 41, 期号: 2, 页码: 203-207
Wang LS; Liu XG; Zan YD; Wang D; Wang J; Lu DC; Wang ZG
收藏  |  浏览/下载：30/0  |  提交时间：2010/08/12

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