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Quantum Hall effect in black phosphorus two-dimensional electron system 期刊论文
nature nanotechnology, 2016, 卷号: 11, 期号: 7, 页码: 593-597
Likai Li; Fangyuan Yang; Guo Jun Ye; Zuocheng Zhang; Zengwei Zhu; Wenkai Lou; Xiaoying Zhou; Liang Li; Kenji Watanabe; Takashi Taniguchi; Kai Chang; YayuWang; Xian Hui Chen* and Yuanbo Zhang
收藏  |  浏览/下载：25/0  |  提交时间：2017/03/10
Hidden quantum mirage by negative refraction in semiconductor P-N junctions 期刊论文
physical review b, 2016, 卷号: 94, 期号: 8, 页码: 085408
Shu-Hui Zhang; Jia-Ji Zhu; Wen Yang; Hai-Qing Lin; Kai Chang
收藏  |  浏览/下载：15/0  |  提交时间：2017/03/10
Chiral tunneling in gated inversion symmetric Weyl semimetal 期刊论文
scientific reports, 2016, 卷号: 6, 页码: 21283
Chunxu Bai; Yanling Yang; Kai Chang
收藏  |  浏览/下载：10/0  |  提交时间：2017/03/10
Specific detection of mercury(II) irons using AlGaAs/InGaAs high electron mobility transistors 期刊论文
journal of crystal growth, 2015, 卷号: 425, 页码: 381-384
Chengyan Wang; Yang Zhang; Min Guan; Lijie Cui; Kai Ding; Bintian Zhang; Zhang Lin; Feng Huang; Yiping Zeng
收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29
Interface effect on structural and optical properties of type II InAs/GaSb superlattices 期刊论文
journal of crystal growth, 2014, 卷号: 407, 页码: 37-41
Huang, Jianliang; Ma, Wenquan; Wei, Yang; Zhang, Yanhua; Cui, Kai; Shao, Jun
收藏  |  浏览/下载：23/0  |  提交时间：2015/03/16
Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004
Xiaolu Guo, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yang Wei, Kai Cui, Yulian Cao and Qiong Li
收藏  |  浏览/下载：22/0  |  提交时间：2014/04/09
Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells 期刊论文
physica e: low-dimensional systems and nanostructures, 2013, 卷号: 52, 页码: 150–154
Liu, Changbo; Yang, Shaoyan; Shi, Kai; Liu, Guipeng; Zhang, Heng; Jin, Dongdong; Gu, Chengyan; Zhao, Guijuan; Sang, Ling; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo
收藏  |  浏览/下载：27/0  |  提交时间：2014/03/18
Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004
Guo, Xiaolu; Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao, Yulian; Li, Qiong
收藏  |  浏览/下载：21/0  |  提交时间：2013/10/08
540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier 期刊论文
ieee electron device letters, 2013, 卷号: 34, 期号: 6, 页码: 759-761
Cui, Kai; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo, Xiaolu; Li, Qiong
收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27
Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity 期刊论文
zhang, yanhua1 ; ma, wenquan1 ; wei, yang1 ; cao, yulian1 ; huang, jianliang1 ; cui, kai1 ; guo, xiaolu1, 2012, 卷号: 100, 期号: 17, 页码: 173511
Zhang, Yanhua; Ma, Wenquan; Wei, Yang; Cao, Yulian; Huang, Jianliang; Cui, Kai; Guo, Xiaolu
收藏  |  浏览/下载：14/0  |  提交时间：2013/04/19

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