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Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation 期刊论文
ieee electron device letters, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Gong, Xiao; Han, Genquan; Bai, Fan; Su, Shaojian; Guo, Pengfei; Yang, Yue; Cheng, Ran; Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Pan, Jisheng; Zhang, Zheng; Tok, Eng Soon; Antoniadis, Dimitri; Yeo, Yee-Chia
收藏  |  浏览/下载:28/0  |  提交时间:2013/09/17
Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer 期刊论文
digest of technical papers - symposium on vlsi technology, 2012, 页码: 97-98
Han, Genquan; Su, Shaojian; Wang, Lanxiang; Zhang, Zheng; Xue, Chunlai; Cheng, Buwen; Yeo, Yee-Chia; Wang, Wei; Gong, Xiao; Yang, Yue; Ivana; Guo, Pengfei; Guo, Cheng; Zhang, Guangze; Pan, Jisheng
收藏  |  浏览/下载:24/0  |  提交时间:2013/05/07


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