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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文 Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320 作者:  Yao Xing;  De Gang Zhao;  De Sheng Jiang;  Xiang Li;  Feng Liang 收藏  |  浏览/下载：39/0  |  提交时间：2018/07/11 Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films 期刊论文 chinese physics b, 2016, 卷号: 25, 期号: 2, 页码: 027102 Jing Yang; De-Gang Zhao; De-Sheng Jiang; Ping Chen; Zong-Shun Liu; Jian-Jun Zhu; Ling-Cong Le; Xiao-Jing Li; Xiao-Guang He; Li-Qun Zhang; Hui Yang 收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10 Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity 期刊论文 ieee journal of photovoltaics, 2016, 卷号: 6, 期号: 2, 页码: 454-459 Jing Yang; De-Gang Zhao; De-Sheng Jiang; Ping Chen; Jian-Jun Zhu; Zong-Shun Liu; Ling-Cong Le; Xiao-Guang He; Xiao-Jing Li; Li-Qun Zhang; Jian-Ping Liu; Hui Yang 收藏  |  浏览/下载：21/0  |  提交时间：2017/03/10 Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC 期刊论文 Chinese Physics B, 2016, 卷号: 25, 期号: 5, 页码: 057703 Feng Liang; Ping Chen; De-Gang Zhao; De-Sheng Jiang; Zhi-Juan Zhao; Zong-Shun Liu; Jian-Jun Zhu; Jing Yang; Wei Liu; Xiao-Guang He; Xiao-Jing Li; Xiang Li; Shuang-Tao Liu; Hui Yang; Li-Qun Zhang; Jian-Ping Liu; Yuan-Tao Zhang; Guo-Tong Du 收藏  |  浏览/下载：30/0  |  提交时间：2017/03/10 Effect of localizaiton states on the electroluminescence spectral width of blue-green light emitting InGaN/GaN multiple quantum wells 期刊论文 journal of vacuum science & technology a, 2015, 卷号: 33, 期号: 6, 页码: 061502 Wei Liu; De Gang Zhao; De Sheng Jiang; Ping Chen; Zong Shun Liu; Jian Jun Zhu; Xiang Li; Ming Shi; Dan Mei Zhao; Jian Ping Liu; Shu Ming Zhang; Hui Wang; Hui Yang 收藏  |  浏览/下载：20/0  |  提交时间：2016/03/23 Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth 期刊论文 ieee photonics technology letters, 2013, 卷号: 25, 期号: 24, 页码: 2401-2404 Feng, Mei-Xin; Liu, Jian-Ping; Zhang, Shu-Ming; Jiang, De-Sheng; Li, Zeng-Cheng; Zhou, Kun; Li, De-Yao; Zhang, Li-Qun; Wang, Feng; Wang, Hui; Chen, Ping; Liu, Zong-Shun; Zhao, De-Gang; Sun, Qian; Yang, Hui 收藏  |  浏览/下载：14/0  |  提交时间：2014/04/09 Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime 期刊论文 chinese physics b, 2013, 卷号: 22, 期号: 9, 页码: 098801 Yang Jing, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Li Liang, Wu Liang-Liang, Le Ling-Cong, Li Xiao-Jing, He Xiao-Guang, Wang Hui, Zhu Jian-Jun, Zhang Shu-Ming, Zhang Bao-Shun, Yang Huia 收藏  |  浏览/下载：19/0  |  提交时间：2014/04/09 Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui) 收藏  |  浏览/下载：127/4  |  提交时间：2010/04/13 GaN  Si (111) substrate  metalorganic chemical vapour deposition  AlN buffer layer  AlGaN interlayer  : VAPOR-PHASE EPITAXY  CRACK-FREE GAN  STRESS-CONTROL  SI(111)  DEPOSITION  ALXGA1-XN  FILM   Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 11, 页码: art. no. 114215 Zeng C (Zeng Chang); Zhang SM (Zhang Shu-Ming); Ji L (Ji Lian); Wang HB (Wang Huai-Bing); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Cao Q (Cao Qing); Chong M (Chong Ming); Duan LH (Duan Li-Hong); Wang H (Wang Hai); Shi YS (Shi Yong-Sheng); Liu SY (Liu Su-Ying); Yang H (Yang Hui); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：43/0  |  提交时间：2010/12/05