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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Photovoltaic effect of tin disulfide with nanocrystalline/amorphous blended phases 期刊论文 solid state communications, 2010, 卷号: 150, 期号: 1-2, 页码: 58-61 Tan FR (Tan Furui); Qu SC (Qu Shengchun); Zeng XB (Zeng Xiangbo); Zhang CS (Zhang Changsha); Shi MJ (Shi Mingji); Wang ZJ (Wang Zhijie); Jin L (Jin Lan); Bi Y (Bi Yu); Cao J (Cao Jie); Wang ZG (Wang, Zhanguo); Hou YB (Hou Yanbing); Teng F (Teng Feng); Feng ZH (Feng, Zhihui) 收藏  |  浏览/下载：180/45  |  提交时间：2010/03/08 Nanocrystalline   Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE 会议论文 international conference on superlattices nano-structures and nano-devices (icsnn-02), toulouse, france, jul 22-26, 2002 Lan Q; Niu ZC; Zhou DY; Kong YC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：26/0  |  提交时间：2010/11/15 Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE 期刊论文 physica e-low-dimensional systems & nanostructures, 2003, 卷号: 17, 期号: 1-4, 页码: 114-116 Lan Q; Niu ZC; Zhou DY; Kong YC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 quantum dots  molecular beam epitaxy  photoluminescence   A method to obtain ground state electroluminescence from 1.3 mu m emitting InAs/GaAs quantum dots grown by molecular beam epitaxy 期刊论文 chinese physics, 2003, 卷号: 12, 期号: 1, 页码: 97-99 Kong YC; Zhou DY; Lan Q; Liu JL; Miao ZH; Feng SL; Niu ZC 收藏  |  浏览/下载：28/0  |  提交时间：2010/08/12 quantum dots  electroluminescence  state filling effect  OPTICAL-PROPERTIES  WAVELENGTH  EMISSION  LASER  GAAS  DEPENDENCE  LAYER   Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy 期刊论文 chinese physics, 2003, 卷号: 12, 期号: 2, 页码: 218-221 Zhou DY; Lan Q; Kong YC; Miao ZH; Feng SL; Niu ZC 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 molecular beam epitaxy (MBE) step bunching  InGaAs  quantum wire  SURFACE-DIFFUSION  GROWTH  DOTS   Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文 10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001 Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 molecular beam epitaxy  InGaAs islands  photolumineseence  line-width  1.3 MU-M  INAS/GAAS QUANTUM DOTS  OPTICAL-PROPERTIES  CAP LAYER  GAAS  LUMINESCENCE  STRAIN