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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 内容类型：会议论文    学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE 会议论文 international conference on superlattices nano-structures and nano-devices (icsnn-02), toulouse, france, jul 22-26, 2002 Lan Q; Niu ZC; Zhou DY; Kong YC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：26/0  |  提交时间：2010/11/15 Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 crystal morphology  quantum dots  molecular beam epitaxy  semiconducting gallium arsenide  semiconducting indium gallium arsenide  1.35 MU-M  GAAS-SURFACES  PHOTOLUMINESCENCE  ISLANDS   Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文 10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001 Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 molecular beam epitaxy  InGaAs islands  photolumineseence  line-width  1.3 MU-M  INAS/GAAS QUANTUM DOTS  OPTICAL-PROPERTIES  CAP LAYER  GAAS  LUMINESCENCE  STRAIN   Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文 26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999 Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY