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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 会议论文 16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010 阎Zhou HY (Zhou Huiying); Qu SC (Qu Shengchun); Jin P (Jin Peng); Xu B (Xu Bo); Ye XL (Ye Xiaoling); Liu JP (Liu Junpeng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：47/0  |  提交时间：2011/07/26 Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Ye XL;  Jin P 收藏  |  浏览/下载：92/22  |  提交时间：2010/03/29 DOTS   Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 low dimensional structures  molecular beam epitaxy  nanomaterials  INAS ISLANDS  GAAS  GROWTH  GAAS(100)  THICKNESS  DENSITY   Self-assembled quantum dots, wires and quantum-dot lasers 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Xu B 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 low dimensional structures  strain  molecular beam epitaxy  quantum dots  semiconducting III-V materials  laser diodes  WELL LASERS   Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 self-assembled quantum dots  InP substrate  high index  In(Ga,Al)As/InAlAs/InP  MBE  MOLECULAR-BEAM-EPITAXY  VAPOR-PHASE EPITAXY  GAAS  ISLANDS  PHOTOLUMINESCENCE  INP(001)  GROWTH  LASERS   Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) 会议论文 40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998 作者:  Xu B 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 bimodal distribution  photoluminescence (PL)  quantum-size effect  GE  ENSEMBLES  SI(100)  GROWTH  SHAPE