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浏览/检索结果: 共14条，第1-10条 帮助 限定条件 发表日期：2011    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Strain-compensated InP-based InGaAsInAlAs quantum cascade infrared detectors for35μm atmospheric window 期刊论文 Proceedings of SPIE- The International Society for Optical Engineering, 2011, 卷号: 8193, 页码: 81931X Zhai, Shen-Qiang; Liu, Jun-Qi; Kong, Ning; Liu, Feng-Qi; Li, Lu; Wang, Li-Jun; Wang, Zhan-Guo 收藏  |  浏览/下载：13/0  |  提交时间：2012/06/14 Free flight  Infrared detectors  Infrared imaging  Optical communication   Recent Developments of Hybrid Nanocrystal/Polymer Bulk Heterojunction Solar Cells 期刊论文 journal of nanoscience and nanotechnology, 2011, 卷号: 11, 期号: 11 s1, 页码: 9384-9394 Tang AW (Tang Aiwei); Qu SC (Qu Shengchun); Teng F (Teng Feng); Hou YB (Hou Yanbing); Wang YS (Wang Yongsheng); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：9/0  |  提交时间：2012/02/22 High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films 期刊论文 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 Zhang, Feng; Sun, Guosheng; Huang, Huolin; Wu, Zhengyun; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Zheng, Liu; Dong, Lin; Zeng, Yiping 收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14 Integrated circuits  Metal insulator boundaries  Photodetectors  Semiconducting silicon compounds  Semiconductor insulator boundaries  Silicon carbide   High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films 期刊论文 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 Zhang F (Zhang Feng); Sun GS (Sun Guosheng); Huang HL (Huang Huolin); Wu ZY (Wu Zhengyun); Wang L (Wang Lei); Zhao WS (Zhao Wanshun); Liu XF (Liu Xingfang); Yan GG (Yan Guoguo); Zheng L (Zheng Liu); Dong L (Dong Lin); Zeng YP (Zeng Yiping) 收藏  |  浏览/下载：16/0  |  提交时间：2012/02/22 Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 11, 页码: 116802 Li LG (Li Li-Gong); Liu SM (Liu Shu-Man); Luo S (Luo Shuai); Yang T (Yang Tao); Wang LJ (Wang Li-Jun); Liu FQ (Liu Feng-Qi); Ye XL (Ye Xiao-Ling); Xu B (Xu Bo); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：9/0  |  提交时间：2012/02/21 Surface Emitting Quantum Cascade Lasers for Sensing and Medical Diagnosis 会议论文 international symposium on photoelectronic detection and imaging 2011 - laser sensing and imaging and biological and medical applications of photonics sensing and imaging, beijing, peoples r china, 2011 Liu JQ (Liu Jun-qi); Chen JY (Chen Jian-yan); Liu WF (Liu Wan-feng); Guo WH (Guo Wan-hong); Jiang YC (Jiang Yu-chao); Liu FQ (Liu Feng-qi); Li L (Li Lu); Wang LJ (Wang Li-jun); Wang ZG (Wang Zhan-guo) 收藏  |  浏览/下载：18/0  |  提交时间：2011/12/13 The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文 applied physics a: materials science and processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 Bi, Yang; Wang, XiaoLiang; Yang, CuiBai; Xiao, HongLing; Wang, CuiMei; Peng, EnChao; Lin, DeFeng; Feng, Chun; Jiang, LiJuan, 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/14 Poisson equation   Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X 收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06 LIGHT-EMITTING-DIODES  VAPOR-PHASE EPITAXY  BAND-GAP  MG  PHOTOLUMINESCENCE  INGAN  DEPENDENCE  STRAIN  ENERGY  INN   Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003 Bi, Yang; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yang, Cuibai; Peng, Enchao; Lin, Defeng; Feng, Chun; Jiang, Lijuan, 收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14 Aluminum  Electron mobility  Gallium nitride  High electron mobility transistors  Indium  Poisson equation  Polarization  Two dimensional electron gas   The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文 european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102 Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ 收藏  |  浏览/下载：36/0  |  提交时间：2012/01/06 ALGAN/GAN/INGAN/GAN DH-HEMTS  FIELD-EFFECT TRANSISTORS  ALGAN/GAN  POLARIZATION  PASSIVATION  HFETS  GHZ