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Beam optics of upgraded high energy heavy ion microbeam in Lanzhou 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 461, 页码: 10-15
作者:  Ponomarov, Artem;  Du, Guanghua;  Guo, Jinlong;  Liu, Wenjing;  Wu, Ruqun
收藏  |  浏览/下载:38/0  |  提交时间:2022/01/19
SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA 期刊论文
ELECTRONICS, 2019, 卷号: 8, 期号: 12, 页码: 12
作者:  Cai, Chang;  Gao, Shuai;  Zhao, Peixiong;  Yu, Jian;  Zhao, Kai
收藏  |  浏览/下载:38/0  |  提交时间:2022/01/19
Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 102, 页码: 6
作者:  Yin, Ya-nan;  Liu, Jie;  Liu, Tian-qi;  Ye, Bing;  Ji, Qing-gang
收藏  |  浏览/下载:8/0  |  提交时间:2022/01/19
Proton and light ions induced SEU effect in a SOI SRAM with gold plated lid 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 5
作者:  Gao, J.;  Zhang, Q.;  Li, B.;  Xi, K.;  Li, B.
收藏  |  浏览/下载:13/0  |  提交时间:2022/01/19
SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 6
作者:  Cai, C.;  Zhao, P. X.;  Xu, L. W.;  Liu, T. Q.;  Li, D. Q.
收藏  |  浏览/下载:16/0  |  提交时间:2022/01/19
Preliminary single event effect distribution investigation on 28 nm soc using heavy ion microbeam 期刊论文
Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2019, 卷号: 450, 页码: 323-326
作者:  Yang, Weitao;  Du, Xuecheng;  Guo, Jinlong;  Wei, Junze;  Du, Guanghua
收藏  |  浏览/下载:113/0  |  提交时间:2019/10/08
Preliminary single event effect distribution investigation on 28 nm SoC using heavy ion microbeam 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 450, 页码: 323-326
作者:  Yang, Weitao;  Du, Xuecheng;  Guo, Jinlong;  Wei, Junze;  Du, Guanghua
收藏  |  浏览/下载:72/0  |  提交时间:2019/11/10
Design and verification of universal evaluation system for single event effect sensitivity measurement in very-large-scale integrated circuits 期刊论文
IEICE ELECTRONICS EXPRESS, 2019, 卷号: 16, 期号: 10, 页码: 6
作者:  Xu, Liewei;  Cai, Chang;  Liu, Tianqi;  Ke, Lingyun;  Yu, Jun
收藏  |  浏览/下载:67/0  |  提交时间:2019/11/10
Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2019, 卷号: 30, 期号: 5, 页码: 11
作者:  Zhao, Pei-Xiong;  Geng, Chao;  Zhang, Zhan-Gang;  Liu, Jie;  Li, Xiao-Yuan
收藏  |  浏览/下载:60/0  |  提交时间:2019/11/10
Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs 期刊论文
ELECTRONICS, 2019, 卷号: 8, 期号: 3, 页码: 13
作者:  Ke, Lingyun;  Zhao, Peixiong;  Liu, Jie;  Fan, Xue;  Cai, Chang
收藏  |  浏览/下载:108/0  |  提交时间:2019/11/10


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