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High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013
Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM
收藏  |  浏览/下载：64/3  |  提交时间：2011/07/05
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载：71/4  |  提交时间：2011/07/05
Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.28101
Su SJ; Wang W; Zhang GZ; Hu WX; Bai AQ; Xue CL; Zuo YH; Cheng BW; Wang QM
收藏  |  浏览/下载：55/3  |  提交时间：2011/07/05
Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie)
收藏  |  浏览/下载：123/5  |  提交时间：2010/04/22
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载：127/4  |  提交时间：2010/04/13
Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition 期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 2, 页码: 313-316
Wu CM (Wu ChaoMin); Shang JZ (Shang JingZhi); Zhang BP (Zhang BaoPing); Zhang JY (Zhang JiangYong); Yu JZ (Yu JinZhong); Wang QM (Wang QiMing)
收藏  |  浏览/下载：72/2  |  提交时间：2010/05/04
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804
Guo X (Guo Xi); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Qiu YX (Qiu Yong-Xin); Xu K (Xu Ke); Yang H (Yang Hui)
收藏  |  浏览/下载：63/0  |  提交时间：2010/08/17
The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 10, 页码: art. no. 105106
Ma, ZF; Zhao, DG; Wang, YT; Jiang, DS; Zhang, SM; Zhu, JJ; Liu, ZS; Sun, BJ; Yang, H; Liang, JW
收藏  |  浏览/下载：51/3  |  提交时间：2010/03/08
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09
Growth of SiGe by D-UHV/CVD at Low Temperature 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 10, 页码: 1889-1892
Zeng Yugang; Han Genquan; Yu Jinzhong
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/23

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