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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者:  Xu B
收藏  |  浏览/下载:51/3  |  提交时间:2011/07/05
All-optical clock recovery using a ridge width varied two-section partly gain-coupled DFB self-pulsation laser 期刊论文
optics communications, 2010, 卷号: 283, 期号: 20, 页码: 3970-3975
Kong DH (Kong D. H.); Zhu HL (Zhu H. L.); Liang S (Liang S.); Zhao XF (Zhao X. F.); Lou CX (Lou C. X.); Wang L (Wang L.); Wang BJ (Wang B. J.); Zhao LJ (Zhao L. J.)
收藏  |  浏览/下载:262/47  |  提交时间:2010/09/20
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者:  Ye XL;  Xu B;  Jin P
收藏  |  浏览/下载:90/0  |  提交时间:2010/04/11
Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001) 期刊论文
journal of crystal growth, 2005, 卷号: 273, 期号: 3-4, 页码: 494-499
作者:  Xu B;  Ye XL;  Jin P
收藏  |  浏览/下载:45/0  |  提交时间:2010/03/17
Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368
Wang XD; Niu ZC; Feng SL; Miao ZH
收藏  |  浏览/下载:93/3  |  提交时间:2010/08/12
Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 193-197
作者:  Xu B
收藏  |  浏览/下载:49/0  |  提交时间:2010/08/12


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