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Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 14, 页码: 143706
Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, J.; Li, X. J.; He, X. G.; Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H.
收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09
Efficacy and reliability of long-term implantation of multi-channel microelectrode arrays in the optical nerve sheath of rabbit eyes 期刊论文
vision research, 2011, 卷号: 51, 期号: 17, 页码: 1897-1906
Wang K; Li XQ; Li XX; Pei WH; Chen HD; Dong JQ
收藏  |  浏览/下载：18/0  |  提交时间：2012/02/06
Hybrid point/ring-defect photonic crystal VCSEL with high spectral purity and high output power 期刊论文
laser physics, 2011, 卷号: 21, 期号: 2, 页码: 379-382
Liu AJ; Chen W; Qu HW; Zhou WJ; Zheng WH
收藏  |  浏览/下载：47/3  |  提交时间：2011/07/06
A practical route towards fabricating GaN nanowire arrays 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H
收藏  |  浏览/下载：25/0  |  提交时间：2012/02/06
Design of a photonic crystal microcavity for biosensing 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 34008
Li, Junhua; Kan, Qiang; Wang, Chunxia; Su, Baoqing; Xie, Yiyang; Chen, Hongda
收藏  |  浏览/下载：20/0  |  提交时间：2012/06/13
Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG
收藏  |  浏览/下载：49/4  |  提交时间：2010/03/08
Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 7, 页码: art.no.073522
Wen C; Wang YM; Wan W; L, FH; Liang JW; Zou J
收藏  |  浏览/下载：140/41  |  提交时间：2010/03/08
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载：88/41  |  提交时间：2010/03/08
Cathodoluminescence study of GaN-based film structures 期刊论文
journal of materials science-materials in electronics, 2008, 卷号: 19, 页码: s58-s63 suppl. 1
作者:  Yang H;  Zhao DG;  Zhu JJ;  Zhang SM;  Yang H
收藏  |  浏览/下载：21/0  |  提交时间：2010/03/08
Investigation on the structural origin of n-type conductivity in InN films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08

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