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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Structural and stable properties of ZnSe/Si core-shell nanowire heterostructures: The first principles calculation 会议论文 8th International Conference on Thin Film Physics and Applications, TFPA 2013, Shanghai, China, September 20, 2013 - September 23, 2013 作者:  Zeng, Yijie;  Zhou, Bofan;  Huang, Yan;  Fang, Yanbian;  Lu, Aijiang 收藏  |  浏览/下载：3/0  |  提交时间：2017/01/20 Shells (structures)  Binding energy  Nanowires  Stability  Thin films  Zinc  Zinc sulfide  Core-shell nanowires  First-principles calculation  Photoelectronics  Stability properties  Stable property  Vegard's law  Wurtzite structure  Zinc blende   Self-healing of GaAs nanowires:an atomistic study 会议论文 23rd International Congress of Theoretical and Applied Mechanics, 中国北京/Beijing, China, 2012-08-19 作者:  Wang J;  Lu CS;  Wang Q;  Xiao P(肖攀);  Ke FJ(柯孚久) 收藏  |  浏览/下载：22/0  |  提交时间：2014/04/02 atomistic  study  healing  tensile  lateral  GaAs  dimensions  restored  fracture  eliminating  throughout  bonding  their  results  mismatch   Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE) 会议论文 Zhang Y. J.; Xu C. S.; Liu Y. C.; Liu Y. X.; Wang G. R.; Fan X. W. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25 We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h  a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range  from 80 to 300 K  but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.   Energy band and acceptor binding energy of GaN and AlxGa1-xN 会议论文 iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999 Xia JB; Cheah KW; Wang XL; Sun DZ; Kong MY 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 acceptor binding energy  hole effective-mass Hamiltonian  wurtzite GaN   MOCVD growth of cubic GaN: Materials and devices 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者:  Zhao DG;  Zhang SM 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 MOCVD  GaN  InGaN  cubic  LED  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  GALLIUM NITRIDE  PHASE EPITAXY  INGAN FILMS  ELECTROLUMINESCENCE  ZINCBLENDE  WURTZITE  MBE