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The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载：49/4  |  提交时间：2011/07/05
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05
Quantitative surface enhanced Raman scattering detection based on the "sandwich" structure substrate 期刊论文
spectrochimica acta part a-molecular and biomolecular spectroscopy, 2011, 卷号: 79, 期号: 3, 页码: 625-630
作者:  Tang AW
收藏  |  浏览/下载：82/5  |  提交时间：2011/07/15
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:  Jin P
收藏  |  浏览/下载：43/4  |  提交时间：2011/07/15
Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD 期刊论文
modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Luo, MC; Li, JM
收藏  |  浏览/下载：42/0  |  提交时间：2010/03/08
A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure 期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 6, 页码: 786-789
作者:  Jin P
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Strong in-plane optical anisotropy of asymmetric (001) quantum wells 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.096102
作者:  Xu B;  Ye XL
收藏  |  浏览/下载：39/0  |  提交时间：2010/04/11
Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 10, 页码: 2834-2837
Liu XF (Liu Xing-Fang); Sun GS (Sun Guo-Sheng); Li JM (Li Jin-Min); Zhao YM (Zhao Yong-Mei); Li JY (Li Jia-Ye); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载：74/0  |  提交时间：2010/04/11
Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者:  Ye XL;  Xu B;  Jin P
收藏  |  浏览/下载：90/0  |  提交时间：2010/04/11

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