CORC

在结果中检索

CORC

浏览/检索结果: 共10条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Magnetic Properties of FePt Nanoparticles Prepared by a Micellar Method 期刊论文
nanoscale research letters, 2010, 卷号: 5, 期号: 1, 页码: 1-6
作者:  You JB;  Zhang XW;  Yin ZG
收藏  |  浏览/下载：203/39  |  提交时间：2010/04/04
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB
收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11
Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Temperature dependence of surface quantum dots grown under frequent growth interruption 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 207-210
作者:  Jin P;  Xu B
收藏  |  浏览/下载：35/0  |  提交时间：2010/04/11
Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626
作者:  Zhang SM
收藏  |  浏览/下载：252/65  |  提交时间：2010/08/12
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:  Xu B
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1005-1009
作者:  Xu B
收藏  |  浏览/下载：125/19  |  提交时间：2010/08/12
Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy 期刊论文
journal of materials science & technology, 1999, 卷号: 15, 期号: 6, 页码: 523-526
作者:  Xu B
收藏  |  浏览/下载：58/0  |  提交时间：2010/08/12
Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures 期刊论文
journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 375-381
Zhuang QD; Li JM; Zeng YP; Pan L; Li HX; Kong MY; Lin LY
收藏  |  浏览/下载：27/0  |  提交时间：2010/08/12

©版权所有 ©2017 CSpace - Powered by CSpace