CORC

浏览/检索结果: 共14条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:  Jin P
收藏  |  浏览/下载:43/4  |  提交时间:2011/07/15
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载:17/0  |  提交时间:2010/12/12
Depolarization blueshift in intersubband transitions of triangular quantum wires 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712
作者:  Song HP;  Zhang B
收藏  |  浏览/下载:31/0  |  提交时间:2010/04/04
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
作者:  Ye XL;  Jin P;  Xu B
收藏  |  浏览/下载:119/42  |  提交时间:2010/03/29
InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth 期刊论文
electronics letters, 2005, 卷号: 41, 期号: 25, 页码: 1400-1402
作者:  Jin P
收藏  |  浏览/下载:51/0  |  提交时间:2010/04/11
Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well 期刊论文
journal of vacuum science & technology b, 2004, 卷号: 22, 期号: 6, 页码: 2568-2573
Li, JM; Lu, YW; Li, DB; Han, XX; Zhu, QS; Liu, XL; Wang, ZG
收藏  |  浏览/下载:16/0  |  提交时间:2010/03/17
Nonlinear optical properties and thermal stability of the poled polymer NTAB/PEK-c 期刊论文
materials letters, 2003, 卷号: 57, 期号: 16-17, 页码: 2612-2615
Pan QW; Fang CS; Qin ZH; Gu QT; Cheng XF; Xu D; Yu JZ
收藏  |  浏览/下载:22/0  |  提交时间:2010/08/12
Progress of Si-based nanocrystalline luminescent materials 期刊论文
chinese science bulletin, 2002, 卷号: 47, 期号: 15, 页码: 1233-1242
Peng YC; Zhao XW; Fu GS
收藏  |  浏览/下载:84/0  |  提交时间:2010/08/12
A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 25-29
作者:  Li CM;  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载:30/0  |  提交时间:2010/08/12
Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141
作者:  Xu B
收藏  |  浏览/下载:44/0  |  提交时间:2010/08/12


©版权所有 ©2017 CSpace - Powered by CSpace