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Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 卷号: 34, 期号: 7
作者:  Du, Lulu;  Xin, Qian;  Xu, Mingsheng;  Liu, Yaxuan;  Liang, Guangda
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
Au Nanoparticle and CdS Quantum Dot Codecoration of In2O3 Nanosheets for Improved H-2 Evolution Resulting from Efficient Light Harvesting and Charge Transfer 期刊论文
ACS SUSTAINABLE CHEMISTRY & ENGINEERING, 2019, 卷号: 7, 期号: 1, 页码: 547-557
作者:  Ma, Dandan;  Shi, Jian-Wen;  Sun, Diankun;  Zou, Yajun;  Cheng, Linhao
收藏  |  浏览/下载：112/0  |  提交时间：2019/12/11
Schottky-barrier thin-film transistors based on HfO2-capped InSe 期刊论文
Applied Physics Letters, 2019, 卷号: 115, 期号: 3
作者:  Wang, Yiming;  Zhang, Jiawei;  Liang, Guangda;  Shi, Yanpeng;  Zhang, Yifei
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
Tunable Schottky barrier in graphene/graphene-like germanium carbide van der Waals heterostructure 期刊论文
SCIENTIFIC REPORTS, 2019, 卷号: 9
作者:  Wang, Sake;  Chou, Jyh-Pin;  Ren, Chongdan;  Tian, Hongyu;  Yu, Jin
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 3, 页码: 451-454
作者:  Du, Lulu;  Xin, Qian;  Xu, Mingsheng;  Liu, Yaxuan;  Mu, Wenxiang
收藏  |  浏览/下载：15/0  |  提交时间：2019/12/11
Schottky-barrier thin-film transistors based on HfO2-capped InSe 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 115, 期号: 3
作者:  Wang, Yiming;  Zhang, Jiawei;  Liang, Guangda;  Shi, Yanpeng;  Zhang, Yifei
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Extremely high-gain source-gated transistors 期刊论文
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2019, 卷号: 116, 期号: 11, 页码: 4843-4848
作者:  Zhang, Jiawei;  Wilson, Joshua;  Auton, Gregory;  Wang, Yiming;  Xu, Mingsheng
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11
Solution-Processed TiO2-Based Schottky Diodes With a Large Barrier Height 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 9, 页码: 1378-1381
作者:  Zhang, Xijian;  Cai, Wensi;  Zhang, Jiawei;  Brownless, Joseph;  Wilson, Joshua
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/11
Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 22, 页码: 19271-19277
作者:  Fan, Zhi-Qang;  Jiang, Xiang-Wei;  Chen, Jiezhi;  Luo, Jun-Wei
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11
Characterization of the inhomogeneous barrier distribution in a Pt/(100) β -Ga2O3 Schottky diode via its temperature-dependent electrical properties 期刊论文
AIP Advances, 2018, 卷号: 8, 期号: 1
作者:  Jian G.;  He Q.;  Mu W.;  Fu B.;  Dong H.
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/11

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