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科研机构
半导体研究所 [41]
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期刊论文 [38]
会议论文 [3]
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2014 [1]
2013 [4]
2011 [5]
2010 [1]
2009 [3]
2008 [3]
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半导体材料 [41]
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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes
期刊论文
chinese physics letters, 2014, 卷号: 31, 期号: 6, 页码: 068502
Kang, H
;
Wang, Q
;
Xiao, HL
;
Wang, CM
;
Jiang, LJ
;
Feng, C
;
Chen, H
;
Yin, HB
;
Wang, XL
;
Wang, ZG
;
Hou, X
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2015/03/25
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors
期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2014/03/18
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang
;
Lin Zhao-Jun
;
Lu Yuan-Jie
;
Luan Chong-Biao
;
Wang Zhan-Guo
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2013/09/17
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors
期刊论文
applied physics letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Li, Huijie
;
Liu, Guipeng
;
Wei, Hongyuan
;
Jiao, Chunmei
;
Wang, Jianxia
;
Zhang, Heng
;
Dong Jin, Dong
;
Feng, Yuxia
;
Yang, Shaoyan
;
Wang, Lianshan
;
Zhu, Qinsheng
;
Wang, Zhan-Guo
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2014/03/17
High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions
期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 9, 页码: 7302
Zheng Liu, Zhang Feng, Liu Sheng-Bei, Dong Lin, Liu Xing-Fang, Fan Zhong-Chao, Liu Bin, Yan Guo-Guo, Wang Lei, Zhao Wan-Shun, Sun Guo-Sheng, He Zhi, Yang Fu-Hua
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2014/03/26
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
收藏
  |  
浏览/下载:69/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512
Lv YJ
;
Lin ZJ
;
Corrigan TD
;
Zhao JZ
;
Cao ZF
;
Meng LG
;
Luan CB
;
Wang ZG
;
Chen H
收藏
  |  
浏览/下载:64/6
  |  
提交时间:2011/07/05
FIELD-EFFECT TRANSISTORS
GAN
DEPENDENCE
CONTACTS
STATES
NI
Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells
期刊论文
solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445
作者:
Liu K
;
Tan FR
收藏
  |  
浏览/下载:87/5
  |  
提交时间:2011/07/05
Polyaniline
Electrodeposition
Thin films
Buffer layers
Solar cells
PHOTOVOLTAIC CELLS
POLYMER
NANOWIRES
EFFICIENCY
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ
;
Lin ZJ
;
Zhang Y
;
Meng LG
;
Cao ZF
;
Luan CB
;
Chen H
;
Wang ZG
收藏
  |  
浏览/下载:56/2
  |  
提交时间:2011/07/05
AlGaN/GaN heterostructures
thermal stressing
polarization
self-consistently solving Schrodinger's and Poisson's equations
FIELD-EFFECT TRANSISTORS
POLARIZATION
STABILITY
CHARGE
GAN
Behavioural investigation of InN nanodots by surface topographies and phase images
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 44, 页码: 445306
Deng, QW
;
Wang, XL
;
Xiao, HL
;
Wang, CM
;
Yin, HB
;
Chen, H
;
Lin, DF
;
Li, JM
;
Wang, ZG
;
Hou, X
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2012/01/06
QUANTUM DOTS
SOLAR-CELLS
GROWTH
FILMS
GAN
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