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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Luminous efficacy and color rendering index of high power white LEDs packaged by using red phosphor 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 1, 页码: 014011-1-014011-3 作者:  Lu Pengzhi;  Yang Hua 收藏  |  浏览/下载：8/0  |  提交时间：2011/08/16 High-power quantum dot superluminescent diode with integrated optical amplifier section 期刊论文 electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191- Wang, ZC; Jin, P; Lv, XQ; Li, XK; Wang, ZG 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06 LIGHT-EMITTING-DIODES  SPECTRUM   Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文 acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108 Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH 收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05 GaN-based  LED  Al composition  electron blocking layer  TEMPERATURE  ALLOYS  MOVPE   Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X 收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06 LIGHT-EMITTING-DIODES  VAPOR-PHASE EPITAXY  BAND-GAP  MG  PHOTOLUMINESCENCE  INGAN  DEPENDENCE  STRAIN  ENERGY  INN   Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands 期刊论文 optics express, 2011, 卷号: 19, 期号: 2, 页码: 1065-1071 作者:  Wei TB 收藏  |  浏览/下载：43/4  |  提交时间：2011/07/05 OUTPUT  ENHANCEMENT   Organic light emitting diodes using magnesium doped organic acceptor as electron injection layer and silver as cathode 期刊论文 chinese physics b, 2008, 卷号: 17, 期号: 5, 页码: 1911-1915 Cao GH; Qin DS; Guan M; Cao JS; Zeng YP; Li JM 收藏  |  浏览/下载：89/3  |  提交时间：2010/03/08 organic light emitting diodes   Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates 期刊论文 physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 7, 页码: 1719-1723 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH 收藏  |  浏览/下载：82/1  |  提交时间：2010/03/08 LIGHT-EMITTING-DIODES  EPITAXIAL LATERAL OVERGROWTH  IMPROVEMENT  NITRIDE  WET   High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region 期刊论文 ieee photonics technology letters, 2008, 卷号: 20, 期号: 40068, 页码: 782-784 Zhang, ZY; Hogg, RA; Jin, P; Choi, TL; Xu, B; Wang, ZG 收藏  |  浏览/下载：95/1  |  提交时间：2010/03/08 molecular beam epitaxy (MBE)  quantum dots (QDs)  superlumineseent light-emitting diodes (SLEDs)   Combined transparent electrodes for high power GaN-based LEDs with long life time 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Wang, LC; Yi, XY; Wang, XD; Wang, GH; Li, JM 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09 LIGHT-EMITTING-DIODES  EFFICIENCY   Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition 期刊论文 journal of vacuum science & technology a, 2003, 卷号: 21, 期号: 4, 页码: 838-841 Qu BZ; Zhu QS; Sun XH; Wan SK; Wang ZG; Nagai H; Kawaguchi Y; Hiramatsu K; Sawaki N 收藏  |  浏览/下载：291/4  |  提交时间：2010/08/12 P-TYPE GAN  LIGHT-EMITTING-DIODES  LOCALIZED EXCITONS  GALLIUM NITRIDE  FILMS  DEFECTS  LUMINESCENCE  COMPENSATION  SPECTROSCOPY  ACCEPTORS