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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE  SELF-DIFFUSION  NATIVE DEFECTS  N-TYPE  CRYSTALS  CATHODOLUMINESCENCE  PHOTOLUMINESCENCE  SEMICONDUCTORS  SPECTROSCOPY  LUMINESCENCE   Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904 作者:  Jin P;  Wei HY;  Song HP 收藏  |  浏览/下载：185/32  |  提交时间：2010/05/04 alloying  annealing  electrical conductivity  excitons  II-VI semiconductors  magnesium compounds  MOCVD coatings  photoluminescence  positron annihilation  semiconductor thin films  vacancies (crystal)  wide band gap semiconductors  zinc compounds  SEMICONDUCTORS  EMISSION  ORIGIN  DIODES   Origin of deep level defect related photoluminescence in annealed InP 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123519 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Miao, SS (Miao, Shanshan); Deng, AH (Deng, Aihong); Yang, J (Yang, Jun); Wang, B (Wang, Bo) 收藏  |  浏览/下载：57/0  |  提交时间：2010/03/29 DOPED SEMIINSULATING INP   Defects in GaSb studied by coincidence Doppler broadening measurements 会议论文 13th international conference on positron annihilation (icpa-13), kyoto, japan, sep 07-12, 2003 Hu WG; Wang Z; Dai YQ; Wang SJ; Zhao YW 收藏  |  浏览/下载：25/1  |  提交时间：2010/10/29 coincidence Doppler broadening  defects  GaSb  positron annihilation   Defects in GaSb studied by coincidence Doppler broadening measurements 期刊论文 positron annihilation, 2004, 卷号: icpa-13 proceedings, 期号: 445-6, 页码: 114-116 Hu, WG; Wang, Z; Dai, YQ; Wang, SJ; Zhao, YW 收藏  |  浏览/下载：129/19  |  提交时间：2010/03/09 coincidence Doppler broadening  defects  GaSb  positron annihilation   Growing process of CdS nanoclusters in zeolite Y studied by positron annihilation 期刊论文 journal of crystal growth, 2001, 卷号: 224, 期号: 3-4, 页码: 274-279 作者:  Liu SM 收藏  |  浏览/下载：95/3  |  提交时间：2010/08/12 growth models  nanostructures  surfaces  semiconducting II-VI materials  positron annihilation  SEMICONDUCTOR COLLOIDS  PHOTOCHEMISTRY  SUPERCLUSTERS  CLUSTERS  ELECTRON