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科研机构
半导体研究所 [23]
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期刊论文 [17]
会议论文 [6]
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2011 [2]
2010 [5]
2009 [1]
2008 [4]
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光电子学 [23]
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Fabrication of two-dimensional Ta2O5 photonic crystal slabs with ultra-low background emission toward highly sensitive fluorescence spectroscopy
期刊论文
optics express, 2011, 卷号: 19, 期号: 2, 页码: 1422-1428
Kaji T
;
Yamada T
;
Ueda R
;
Xu XS
;
Otomo A
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浏览/下载:61/6
  |  
提交时间:2011/07/05
ENHANCED FLUORESCENCE
CONFORMATIONAL DYNAMICS
THIN-FILMS
WAVE-GUIDE
SURFACE
MODES
LASER
Lifetime computing algorithms based on exponential pattern retrieve and polynomial fitting in fluorescence lifetime imaging microscopy
期刊论文
proceedings of spie- the international society for optical engineering, 2011, 卷号: 8200, 页码: 82000x
Liu, Chao
;
Zhou, Yan
;
Wang, Xinwei
;
Liu, Yuliang
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  |  
浏览/下载:4/0
  |  
提交时间:2012/06/14
Fluorescence
Numerical analysis
Optical instruments
Technology
Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy
期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 16, 页码: 3433-3435
Zhao CW (Zhao C. W.)
;
Xing YM (Xing Y. M.)
;
Yu JZ (Yu J. Z.)
;
Han GQ (Han G. Q.)
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  |  
浏览/下载:100/3
  |  
提交时间:2010/09/07
Si/Ge heterostructures
Strain
High-resolution Transmission electron
microscopy
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Chen GF (Chen Gui-Feng)
;
Zhang SM (Zhang Shu-Ming)
;
Jiang DS (Jiang De-Sheng)
;
Liu ZS (Liu Zong-Shun)
;
Zhao DG (Zhao De-Gang)
;
Wang H (Wang Hui)
;
Wang YT (Wang Yu-Tian)
;
Yang H (Yang Hui)
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  |  
浏览/下载:127/4
  |  
提交时间:2010/04/13
GaN
Si (111) substrate
metalorganic chemical vapour deposition
AlN buffer layer
AlGaN interlayer
: VAPOR-PHASE EPITAXY
CRACK-FREE GAN
STRESS-CONTROL
SI(111)
DEPOSITION
ALXGA1-XN
FILM
Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy
期刊论文
journal of semiconductors, 2010, 卷号: 31, 期号: 10, 页码: 104007-1-104007-5
作者:
Chen Lianghui
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  |  
浏览/下载:11/0
  |  
提交时间:2011/08/16
Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 2, 页码: 313-316
Wu CM (Wu ChaoMin)
;
Shang JZ (Shang JingZhi)
;
Zhang BP (Zhang BaoPing)
;
Zhang JY (Zhang JiangYong)
;
Yu JZ (Yu JinZhong)
;
Wang QM (Wang QiMing)
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  |  
浏览/下载:72/2
  |  
提交时间:2010/05/04
MOCVD
DBR
high-reflectivity
nitride
SURFACE-EMITTING LASER
Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD
期刊论文
journal of the korean physical society, 2010, 卷号: 57, 期号: 1, 页码: 128-132
Sun YP (Sun Yuanping)
;
Sun Y (Sun Yuanping)
;
Cho YH (Cho Yong-Hoon)
;
Wang H (Wang Hui)
;
Wang LL (Wang Lili)
;
Zhang SM (Zhang Shuming)
;
Yang H (Yang Hui)
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  |  
浏览/下载:513/2
  |  
提交时间:2010/08/17
InN
Burstein-Moss effect
Quantum confinement effect
Activation energy
FUNDAMENTAL-BAND GAP
WELL STRUCTURES
EMISSION
SINGLE
Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
期刊论文
chinese optics letters, 2009, 卷号: 7, 期号: 1, 页码: 52-55
Wei QX
;
Ren ZW
;
He ZH
;
Niu ZC
收藏
  |  
浏览/下载:75/0
  |  
提交时间:2010/03/08
1.3 MU-M
ROOM-TEMPERATURE
OPTICAL-PROPERTIES
CAP LAYER
GAAS
DEPOSITION
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, FW
;
Gao, HY
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:134/0
  |  
提交时间:2010/03/09
GaN
MOCVD
LED
nano-pattern
SEM
HRXRD
PL
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
GaN
nitrides
LED
MOCVD
patterned sapphire substrate
wet etching
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