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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512 Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H 收藏  |  浏览/下载：64/6  |  提交时间：2011/07/05 FIELD-EFFECT TRANSISTORS  GAN  DEPENDENCE  CONTACTS  STATES  NI   Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105 Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG 收藏  |  浏览/下载：56/2  |  提交时间：2011/07/05 AlGaN/GaN heterostructures  thermal stressing  polarization  self-consistently solving Schrodinger's and Poisson's equations  FIELD-EFFECT TRANSISTORS  POLARIZATION  STABILITY  CHARGE  GAN   Effect of silver growth temperature on the contacts between Ag and ZnO thin films 期刊论文 science in china series e-technological sciences, 2009, 卷号: 52, 期号: 9, 页码: 2779-2784 作者:  Li XK 收藏  |  浏览/下载：90/1  |  提交时间：2010/03/08 ZnO  Schottky barrier  interface  MSM structure   Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文 applied physics letters, 2007, 卷号: 91, 期号: 17, 页码: art.no.173507 Zhao J (Zhao, Jianzhi); Lin Z (Lin, Zhaojun); Corrigan TD (Corrigan, Timothy D.); Wang Z (Wang, Zhen); You Z (You, Zhidong); Wang Z (Wang, Zhanguo) 收藏  |  浏览/下载：60/0  |  提交时间：2010/03/29 FIELD-EFFECT TRANSISTORS   Resonant Raman scattering of a-SiNx : H 期刊论文 materials letters, 2001, 卷号: 47, 期号: 1-2, 页码: 50-54 Wang Y; Yue RF; Han HX; Liao XB; Wang YQ; Diao HW; Kong GL 收藏  |  浏览/下载：64/0  |  提交时间：2010/08/12 a-Sin(x): H films  resonant Raman scattering  quantum confinement model  POLYCRYSTALLINE DIAMOND FILMS  AMORPHOUS-SILICON  HYDROGENATED MICROCRYSTALLINE  SPECTROSCOPY  ALLOYS   A new structure of In-based ohmic contacts to n-type GaAs 期刊论文 applied physics a-materials science & processing, 1996, 卷号: 62, 期号: 3, 页码: 241-245 Ding SA; Hsu CC 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/17 MICROSTRUCTURE