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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111 Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08 aluminium compounds  dislocation density  electron mobility  gallium compounds  III-V semiconductors  interface roughness  semiconductor heterojunctions  two-dimensional electron gas  wide band gap semiconductors   Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 6, 页码: 2269-2272 Zhao, YM; Sun, GS; Ning, J; Liu, XF; Zhao, WS; Wang, L; Li, JM 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION   Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition 期刊论文 japanese journal of applied physics, 2008, 卷号: 47, 期号: 4, 页码: 2225-2229 part 1 Zhu, BL; Zhao, XZ; Xu, S; Su, FH; Li, GH; Wu, XG; Wu, J; Wu, R; Liu, J 收藏  |  浏览/下载：42/2  |  提交时间：2010/03/08 laser ablation  zinc oxide  deposition process  optical properties  electrical properties and measurements   1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz 期刊论文 solid-state electronics, 2007, 卷号: 51, 期号: 3, 页码: 428-432 Wang XL; Cheng TS; Ma ZY; Hu G; Xiao HL; Ran JX; Wang CM; Luo WJ 收藏  |  浏览/下载：95/0  |  提交时间：2010/03/29 AlGaN/GaN   Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 4, 页码: 1080-1084 Hao RT (Hao Ruiting); Xu YQ (Xu Yingqiang); Zhou ZQ (Zhou Zhiqiang); Ren ZW (Ren Zhengwei); Ni HQ (Ni Haiqiao); He ZH (He Zhenhong); Niu ZC (Niu, Zhichuan) 收藏  |  浏览/下载：92/0  |  提交时间：2010/03/29 INFRARED PHOTODIODES   A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 2, 页码: 516-518 Hu, WG (Hu Wei-Guo); Liu, XL (Liu Xiang-Lin); Zhang, PF (Zhang Pan-Feng); Zhao, FA (Zhao Feng-Ai); Jiao, CM (Jiao Chun-Mei); Wei, HY (Wei Hong-Yuan); Zhang, RQ (Zhang Ri-Qing); Wu, JJ (Wu Jie-Jun); Cong, GW (Cong Guang-Wei); Pan, Y (Pan Yi) 收藏  |  浏览/下载：40/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112) 期刊论文 surface science, 1997, 卷号: 381, 期号: 1, 页码: 1-11 Ranke W; Xing YR 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/17 adsorption kinetics  low energy electron diffraction  low index single crystal surfaces  silicon  surface structure  morphology  roughness  and topography  vicinal single crystal surfaces  visible and ultraviolet photoelectron spectroscopy  water  SCANNING-TUNNELING-MICROSCOPY  CYLINDRICAL SILICON CRYSTAL  MILLER INDEX SURFACES  ROOM-TEMPERATURE  VICINAL SURFACES  ATOMIC-STRUCTURE  H2O  SI(100)  CHEMISORPTION  LEED