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Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures 期刊论文
acs nano., 2016, 卷号: 10, 期号: 3, 页码: 3852−3858
Kenan Zhang; Tianning Zhang; Guanghui Cheng; Tianxin Li; Shuxia Wang; Wei Wei; Xiaohao Zhou; Weiwei Yu; Yan Sun; Peng Wang; Dong Zhang; Changgan Zeng; Xingjun Wang; Weida Hu; Hong Jin Fan; Guozhen Shen; Xin Chen; Xiangfeng Duan; Kai Chang; Ning Dai
收藏  |  浏览/下载：43/0  |  提交时间：2017/03/10
Interface engineering for highly efficient graphene-on-silicon Schottky junction solar cells by introducing a hexagonal boron nitride interlayer 期刊论文
nano energy, 2016, 卷号: 28, 页码: 44-50
Jun-Hua Meng; Xin Liu; Xing-Wang Zhang; Yue Zhang; Hao-Lin Wang; Zhi-Gang Yin; Yong-Zhe Zhang; Heng Liu; Jing-Bi You; Hui Yan
收藏  |  浏览/下载：61/0  |  提交时间：2017/03/10
Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer 期刊论文
chinese physics b, 2015, 卷号: 24, 期号: 2, 页码: 26802-26806
Jian-Xia Wang; Lian-Shan Wang; Qian Zhang; Xiang-Yue Meng; Shao-Yan Yang; Gui-Juan Zhao; Hui-Jie Li; Hong-Yuan Wei; Zhan-Guo Wang
收藏  |  浏览/下载：14/0  |  提交时间：2016/03/29
Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 2, 页码: 026801
Wang, JX; Wang, LS; Yang, SY; Li, HJ; Zhao, GJ; Zhang, H; Wei, HY; Jiao, CM; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：16/0  |  提交时间：2015/03/20
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512
Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG
收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05
GaN grown with InGaN as a weakly bonded layer 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908
Zheng XH (Zheng X. H.); Huang AP (Huang A. P.); Xiao ZS (Xiao Z. S.); Yang ZC (Yang Z. C.); Wang M (Wang M.); Zhang XW (Zhang X. W.); Wang WW (Wang W. W.); Chu PK (Chu Paul K.)
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/14
OXYGEN  GATE  DIFFUSION  FILMS  
Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文
rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
作者:  Wei TB;  Yang JK;  Duan RF
收藏  |  浏览/下载：58/10  |  提交时间：2011/07/05
Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 4, 页码: art. no. 043709
作者:  Zhang XW;  Yin ZG;  Song HP;  You JB
收藏  |  浏览/下载：80/3  |  提交时间：2010/03/08

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