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科研机构
半导体研究所 [17]
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期刊论文 [16]
会议论文 [1]
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2014 [1]
2011 [1]
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半导体物理 [17]
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Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy
期刊论文
applied physics letters, 2014, 卷号: 104, 期号: 5, 页码: 052111
Wang, J
;
Xing, JL
;
Xiang, W
;
Wang, GW
;
Xu, YQ
;
Ren, ZW
;
Niu, ZC
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2015/03/19
Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell
期刊论文
applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 2, 页码: 335-341
作者:
He JF
;
Li MF
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  |  
浏览/下载:40/1
  |  
提交时间:2011/07/05
INTERMEDIATE-BAND
TRANSITIONS
Resonant subband Landau level coupling in symmetric quantum well
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502
Tung LC (Tung L. -C.)
;
Wu XG (Wu X. -G.)
;
Pfeiffer LN (Pfeiffer L. N.)
;
West KW (West K. W.)
;
Wang YJ (Wang Y. -J.)
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  |  
浏览/下载:29/0
  |  
提交时间:2010/12/05
TILTED MAGNETIC-FIELDS
ELECTRON-GAS
DEPOLARIZATION SHIFT
CYCLOTRON-RESONANCE
MATRIX-ELEMENTS
HETEROJUNCTIONS
SPECTROSCOPY
TECHNOLOGY
ABSORPTION
SYSTEMS
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:
Li JB
;
Hou QF
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  |  
浏览/下载:65/11
  |  
提交时间:2010/03/08
N-TYPE GAN
ELECTRON-MOBILITY TRANSISTORS
VAPOR-PHASE EPITAXY
DEFECTS
THERMOLUMINESCENCE
CARBON
TRAP
InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 10, 页码: art.no.107302
Wang H (Wang Hui)
;
Zhu JH (Zhu Ji-Hong)
;
Jiang DS (Jiang De-Sheng)
;
Zhu JJ (Zhu Jian-Jun)
;
Zhao DG (Zhao De-Gang)
;
Liu ZS (Liu Zong-Shun)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:157/39
  |  
提交时间:2010/03/08
TRANSPORT CHARACTERISTICS
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107
作者:
Qian X
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  |  
浏览/下载:80/7
  |  
提交时间:2010/03/08
aluminium compounds
carrier lifetime
gallium arsenide
high-frequency effects
III-V semiconductors
optical Kerr effect
semiconductor heterojunctions
spin dynamics
two-dimensional electron gas
First-principles study of p-type transparent conductive oxides CuXO2 (X=Y, Sc, and Al)
期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 7, 页码: art. no. 073527
Shi, LJ
;
Fang, ZJ
;
Li, JB
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  |  
浏览/下载:64/0
  |  
提交时间:2010/03/08
AUGMENTED-WAVE METHOD
DELAFOSSITE STRUCTURE
ELECTRONIC-STRUCTURE
V SEMICONDUCTORS
THIN-FILMS
II-VI
CUSCO2
CUALO2
ENERGY
CUYO2
Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well
期刊论文
acta physica sinica, 2008, 卷号: 57, 期号: 8, 页码: 5232-5236
Shang, LY
;
Lin, T
;
Zhou, WZ
;
Li, DL
;
Gao, HL
;
Zeng, YP
;
Guo, SL
;
Yu, GL
;
Chu, JH
收藏
  |  
浏览/下载:86/0
  |  
提交时间:2010/03/08
two-dimensional electron gas
positive magnetoresistance
intersubband scattering
Dislocation scattering in AlxGa1-xN/GaN heterostructures
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111
Xu, XQ
;
Liu, XL
;
Han, XX
;
Yuan, HR
;
Wang, J
;
Guo, Y
;
Song, HP
;
Zheng, GL
;
Wei, HY
;
Yang, SY
;
Zhu, QS
;
Wang, ZG
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2010/03/08
aluminium compounds
dislocation density
electron mobility
gallium compounds
III-V semiconductors
interface roughness
semiconductor heterojunctions
two-dimensional electron gas
wide band gap semiconductors
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