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Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载：41/3  |  提交时间：2011/07/05
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
Achieving high efficiency laminated polymer solar cell with interfacial modified metallic electrode and pressure induced crystallization 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 6, 页码: article no.63306
Yuan YB; Bi Y; Huang JS
收藏  |  浏览/下载：60/5  |  提交时间：2011/07/05
Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088101
Sun GS (Sun Guo-Sheng); Liu XF (Liu Xing-Fang); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Yang T (Yang Ting); Wu HL (Wu Hai-Lei); Yan GG (Yan Guo-Guo); Zhao YM (Zhao Yong-Mei); Ning J (Ning Jin); Zeng YP (Zeng Yi-Ping); Li JM (Li Jin-Min)
收藏  |  浏览/下载：172/19  |  提交时间：2010/09/07
A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文
applied surface science, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：139/13  |  提交时间：2010/04/22
Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文
rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
作者:  Wei TB;  Yang JK;  Duan RF
收藏  |  浏览/下载：58/10  |  提交时间：2011/07/05
Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 8, 页码: 34-38
Xie Jing; Liu Yunfei; Yang Jinling; Tang Longjuan; Yang Fuhua
收藏  |  浏览/下载：22/0  |  提交时间：2010/11/23
The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503
Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载：55/1  |  提交时间：2010/03/08
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:  Zhao J
收藏  |  浏览/下载：43/4  |  提交时间：2011/07/05
First-principles study of native defects in rutile TiO2 期刊论文
physics letters a, 2008, 卷号: 372, 期号: 9, 页码: 1527-1530
Peng, H
收藏  |  浏览/下载：86/28  |  提交时间：2010/03/08

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