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HIGH CURRENT, MULTI-FINGER InGaAs/InP HETEROSTRUCTURE BIPOLAR TRANSISTOR WITH f(t) OF 176GHz 外文期刊
2009
作者:  Cheng, W;  Jin, Z;  Qi, M;  Xu, AH;  Liu, XY
收藏  |  浏览/下载:20/0  |  提交时间:2010/11/26
Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with f(max) of 305 GHz 外文期刊
2008
作者:  Jin, Z;  Su, Y;  Cheng, W;  Liu, X;  Xu, A
收藏  |  浏览/下载:18/0  |  提交时间:2010/11/26
High-speed InGaAs/InP double heterostructure bipolar transistor with high breakdown voltage 外文期刊
2008
作者:  Jin, Z;  Su, YB;  Cheng, W;  Liu, XY;  Xu, AH
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/26


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