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A high-performance photodetector based on an inorganic perovskite–ZnO heterostructure 期刊论文
Journal of Materials Chemistry C, 2017, 卷号: 5, 页码: 6115-6122
作者:  Heng Liu;  Xingwang Zhang;  Liuqi Zhang;  Zhigang Yin;  Denggui Wang
收藏  |  浏览/下载：31/0  |  提交时间：2018/05/31
Tunable electronic structure of black phosphorus/blue phosphorus van der Waals p-n heterostructure 期刊论文
applied physics letters, 2016, 卷号: 108, 期号: 8, 页码: 083101
Le Huang; Jingbo Li
收藏  |  浏览/下载：10/0  |  提交时间：2017/03/10
Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 4, 页码: 044507
Luan, CB; Lin, ZJ; Lv, YJ; Zhao, JT; Wang, YT; Chen, H; Wang, ZG
收藏  |  浏览/下载：15/0  |  提交时间：2015/03/19
Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 5, 页码: 054502
Yan, JD; Wang, XL; Wang, Q; Qu, SQ; Xiao, HL; Peng, EC; Kang, H; Wang, CM; Feng, C; Yin, HB; Jiang, LJ; Li, BQ; Wang, ZG; Hou, X
收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo
收藏  |  浏览/下载：28/0  |  提交时间：2013/09/17
Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor 期刊论文
chin. phys. b, 2013, 卷号: 22, 期号: 6, 页码: 067203
Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18
Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文
journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 00218979
Luan, Chongbiao; Lin, Zhaojun; Feng, Zhihong; Meng, Lingguo; Lv, Yuanjie; Cao, Zhifang; Yu, Yingxia; Wang, Zhanguo
收藏  |  浏览/下载：12/0  |  提交时间：2013/05/07
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 097104
Lu YJ (Lu Yuan-Jie); Lin ZJ (Lin Zhao-Jun); Yu YX (Yu Ying-Xia); Meng LG (Meng Ling-Guo); Cao ZF (Cao Zhi-Fang); Luan CB (Luan Chong-Biao); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：16/0  |  提交时间：2013/04/02
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 16741056
Lü, Yuan-Jie; Lin, Zhao-Jun; Yu, Ying-Xia; Meng, Ling-Guo; Cao, Zhi-Fang; Luan, Chong-Biao; Wang, Zhan-Guo
收藏  |  浏览/下载：17/0  |  提交时间：2013/05/07

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