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| Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
  收藏 | 浏览/下载：36/4 | 提交时间：2011/07/05
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| Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB
收藏 | 浏览/下载：48/0 | 提交时间：2010/04/11
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| Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者: Xu B
收藏 | 浏览/下载：55/0 | 提交时间：2010/04/11
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| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160
作者: Jiang DS
收藏 | 浏览/下载：55/0 | 提交时间：2010/08/12
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| Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy 期刊论文
physical review b, 2002, 卷号: 66, 期号: 19, 页码: art.no.195321
作者: Ye XL
收藏 | 浏览/下载：64/0 | 提交时间：2010/08/12
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| Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141
作者: Xu B
收藏 | 浏览/下载：44/0 | 提交时间：2010/08/12
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| Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping 期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
作者: Zhang SM
收藏 | 浏览/下载：92/4 | 提交时间：2010/08/12
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| Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文
physica e, 2000, 卷号: 8, 期号: 2, 页码: 134-140
作者: Ye XL; Xu B
收藏 | 浏览/下载：52/0 | 提交时间：2010/08/12
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| Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文
50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999
作者: Xu B; Ye XL
收藏 | 浏览/下载：10/0 | 提交时间：2010/11/15
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| Effect of rapid thermal annealing on InGaAs/GaAs quantum wells 期刊论文
journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 352-355
Zhuang QD; Li JM; Zeng YP; Yoon SF; Zheng HQ; Kong MY; Lin LY
收藏 | 浏览/下载：61/0 | 提交时间：2010/08/12
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