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| VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84328
Huang SL; Wu Y; Zhu XF; Li LX; Wang ZG; Wang LZ; Lu GQ
  收藏 | 浏览/下载：29/0 | 提交时间：2011/07/05
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| Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 2, 页码: 1169-1174
Peng YC (Peng Ying-Cai); Fan ZD (Fan Zhi-Dong); Bai ZH (Bai Zhen-Hua); Ma L (Ma Lei)
收藏 | 浏览/下载：140/29 | 提交时间：2010/04/21
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| Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Dong HW; Zhao YW; Zeng YP; Jiao JH; Li JM; Lin LY
收藏 | 浏览/下载：45/0 | 提交时间：2010/08/12
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| Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 期刊论文
thin solid films, 2001, 卷号: 395, 期号: 1-2, 页码: 213-216
Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y
收藏 | 浏览/下载：159/11 | 提交时间：2010/08/12
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| Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 会议论文
1st international conference on cat-cvd (hot wire cvd) process, kanazawa, japan, nov 14-17, 2000
Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y
收藏 | 浏览/下载：20/0 | 提交时间：2010/11/15
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| Epitaxial growth of GaNAs/GaAs heterostructure materials 会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Lin YW; Pan Z; Li LH; Zhou ZQ; Wang H; Zhang W
收藏 | 浏览/下载：12/0 | 提交时间：2010/11/15
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| Epitaxial growth of GaNAs/GaAs heterostructure materials 期刊论文
thin solid films, 2000, 卷号: 368, 期号: 2, 页码: 249-252
Lin YW; Pan Z; Li LH; Zhou ZQ; Wang H; Zhang W
收藏 | 浏览/下载：41/0 | 提交时间：2010/08/12
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| Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 535-540
Liu JP; Kong MY; Li JP; Liu XF; Huang DD; Sun DZ
收藏 | 浏览/下载：33/0 | 提交时间：2010/08/12
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| Low-temperature growth of cubic GaN by metalorganic chemical-vapor deposition 期刊论文
thin solid films, 1998, 卷号: 326, 期号: 1-2, 页码: 251-255
Zheng LX; Yang H; Xu DP; Wang XJ; Li XF; Li JB; Wang YT; Duan LH; Hu XW
收藏 | 浏览/下载：49/0 | 提交时间：2010/08/12
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