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Investigating the Mechanism of Hysteresis Effect in Graphene Electrical Field Device Fabricated on SiO2 Substrates using Raman Spectroscopy 期刊论文
SMALL, 2012, 卷号: 8, 期号: 18
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Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2011, 卷号: 13, 期号: 8
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