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| Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG
  收藏 | 浏览/下载：23/0 | 提交时间：2012/02/06
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| Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512
Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H
收藏 | 浏览/下载：64/6 | 提交时间：2011/07/05
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| Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏 | 浏览/下载：17/0 | 提交时间：2010/12/12
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| Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW; Xu XQ; Wang J; Liu JM; Liu XL; Yang SY; Zhu QS; Wang ZG
收藏 | 浏览/下载：67/8 | 提交时间：2011/07/05
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| Effect of small-angle scattering on the integer quantum Hall plateau 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 2, 页码: 436-438
Shu Q; Lin YW; Xing XD; Yao JH; Pi B; Shu YC; Wang ZG; Xu JJ
收藏 | 浏览/下载：266/7 | 提交时间：2010/04/11
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| Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots 期刊论文
electrochemical and solid state letters, 2006, 卷号: 9, 期号: 5, 页码: g167-g170
作者: Ye XL ; Xu B
收藏 | 浏览/下载：76/0 | 提交时间：2010/04/11
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| Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者: Ye XL; Xu B; Jin P
收藏 | 浏览/下载：90/0 | 提交时间：2010/04/11
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| A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 188-194
Chen Z; Lu DH; Yuan HR; Han P; Liu XL; Li YF; Wang XH; Lu Y; Wang ZG
收藏 | 浏览/下载：101/11 | 提交时间：2010/08/12
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| Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE 期刊论文
journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 110-117
Xu HZ; Takahashi K; Wang CX; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT
收藏 | 浏览/下载：54/0 | 提交时间：2010/08/12
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| Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition 期刊论文
journal of electronic materials, 2000, 卷号: 29, 期号: 2, 页码: 177-182
作者: Zhao DG
收藏 | 浏览/下载：42/0 | 提交时间：2010/08/12
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