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Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to β-Ga2O3 thin film 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 8, 页码: 085105
作者:  Zeng Liu;   Yusong Zhi;   Shan Li;   Yuanyuan Liu;   ;   Xiao Tang;   Zuyong Yan;   Peigang Li;   Xiaohang Li;   Daoyou Guo;   Zhenping Wu;   Weihua Tang
收藏  |  浏览/下载：11/0  |  提交时间：2021/11/05
Enhanced Photoresponse in MoTe 2 Photodetectors with Asymmetric Graphene Contacts 期刊论文
Adv. Optical Mater., 2019, 卷号: 7, 页码: 1900190
作者:  Xia Wei;  Faguang Yan;  Quanshan Lv;  Wenkai Zhu;  Ce Hu;  Amalia Patan`e;  Kaiyou Wang
收藏  |  浏览/下载：20/0  |  提交时间：2020/07/30
Electrical contacts and tunable rectifications in monolayer GeSe-metal junctions 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 33, 页码: 335104
作者:  Zhi-Qiang Fan;  Jiezhi Chen;  Xiangwei Jiang
收藏  |  浏览/下载：8/0  |  提交时间：2019/11/18
Fabrication of Low-Resistance Ni Ohmic Contacts on n + -Ge 1− x Sn x 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 11, 页码: 4971-4974
作者:  Jun Zheng ;   Yongwang Zhang ;   Zhi Liu ;   Yuhua Zuo;   Chuanbo Li ;   Chunlai Xue ;   Buwen Cheng;   Qiming Wang
收藏  |  浏览/下载：21/0  |  提交时间：2019/11/19
Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts 期刊论文
journal of applied physics, 2016, 卷号: 119, 期号: 5, 页码: 054304
Boyong Feng; Shaoyun Huang; Jiyin Wang; Dong Pan; Jianghua Zhao; H. Q. Xu
收藏  |  浏览/下载：16/0  |  提交时间：2017/03/16
Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation 期刊论文
AIP Advances, 2015, 卷号: 5, 期号: 12
Suyuan Wang; Jun Zheng; Chunlai Xue; Chuanbo Li; Yuhua Zuo; Buwen Cheng; Qiming Wang
收藏  |  浏览/下载：20/0  |  提交时间：2016/03/22
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo
收藏  |  浏览/下载：28/0  |  提交时间：2013/09/17
Interface and Transport Properties of Metallization Contacts to Flat and Wet-Etching Roughed N-Polar n-Type GaN 期刊论文
acs applied materials & interfaces, 2013, 卷号: 5, 期号: 12, 页码: 5797–5803
Liancheng Wang, Zhiqiang Liu, Enqing Guo, Hua Yang, Xiaoyan Yi, Guohong Wang
收藏  |  浏览/下载：25/0  |  提交时间：2014/04/09
Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor 期刊论文
international symposium on vlsi technology, systems, and applications, proceedings, 2012, 页码: 6210151
Wang, Lanxiang; Han, Genquan; Su, Shaojian; Cheng, Buwen; Yeo, Yee-Chia; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Xue, Chunlai; Wang, Qiming
收藏  |  浏览/下载：30/0  |  提交时间：2013/05/07

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