QQ客服 官方微博 反馈留言

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位    发表日期：2006     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Defect influence on luminescence efficiency of GaN-based LEDs 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong) 收藏  |  浏览/下载：470/18  |  提交时间：2010/03/29 defects   1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG 收藏  |  浏览/下载：223/60  |  提交时间：2010/03/29 IMPROVED LUMINESCENCE EFFICIENCY  TEMPERATURE  PHOTOLUMINESCENCE  NITROGEN  ORIGIN  DIODES   Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 会议论文 15th international conferene on dynamical processes in excited states of solids, shanghai, peoples r china, aug 01-05, 2005 作者:  Jin P 收藏  |  浏览/下载：159/26  |  提交时间：2010/03/29 quantum dots   Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文 3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005 Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：110/24  |  提交时间：2010/03/29 molecular beam epitaxy   Structure and visible luminescence of ZnO nanoparticles 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Peng, WQ (Peng, W. Q.); Qu, SC (Qu, S. C.); Cong, GW (Cong, G. W.); Wang, ZG (Wang, Z. G.) 收藏  |  浏览/下载：202/42  |  提交时间：2010/03/29 nanoparticles