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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位    发表日期：2001     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Optical characterization of the Ge/Si (001) islands in multilayer structure 会议论文 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 Huang CJ; Zuo YH; Li C; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 Ge/Si islands  quantum dot  band alignment  PL  SI/SI1-XGEX QUANTUM-WELLS  STRANSKI-KRASTANOV GROWTH  II BAND ALIGNMENT  GE ISLANDS  TEMPERATURE-DEPENDENCE  PHOTOLUMINESCENCE  LAYERS  LUMINESCENCE  ORGANIZATION  MECHANISM   Photoluminescence from carbon nanotubes 会议论文 25th international conference on the physics of semiconductors (icps25), osaka, japan, sep 17-22, 2000 Han HX; Li GH; Ge WK; Wang ZP; Xu ZY; Xie SS; Chang BH; Sun LF; Wang BS; Xu G; Su ZB 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 ELECTRONIC-STRUCTURE   Observation of the resonant Raman behavior of individual single-walled carbon nanotubes 会议论文 25th international conference on the physics of semiconductors (icps25), osaka, japan, sep 17-22, 2000 作者:  Tan PH 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 ELECTRIC-ARC TECHNIQUE  LARGE-SCALE  SCATTERING  SPECTRA  STOKES  MODES   Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering 会议论文 chinese-german workshop on characterization and development on nanosystems, beijing, peoples r china, oct 30-nov 02, 2000 Liu JW; Xie FQ; Zhong DY; Wang EG; Liu WX; Li SF; Yang H 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 luminescence  SiC  nanocrystalline film  rf sputtering  RAMAN-SCATTERING   Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文 10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001 Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 molecular beam epitaxy  InGaAs islands  photolumineseence  line-width  1.3 MU-M  INAS/GAAS QUANTUM DOTS  OPTICAL-PROPERTIES  CAP LAYER  GAAS  LUMINESCENCE  STRAIN   Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots 会议论文 9th international conference on high pressure semiconductor physics (hpsp9), sapporo, japan, sep 24-28, 2000 Li GH; Chen Y; Fung ZL; Ding K; Han HX; Zhou W; Wang ZG 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 HYDROSTATIC-PRESSURE  PHOTOLUMINESCENCE  GAAS  LUMINESCENCE  GROWTH  INSB  GASB   Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Jiang DS 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 molecular beam epitaxy  quantum wells  semiconducting IIIV materials  LUMINESCENCE  GAASN   Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 会议论文 4th international conference on nitride semiconductors (icns-4), denver, colorado, jul 16-20, 2001 Sun XL; Yang H; Zhu JJ; Wang YT; Chen Y; Li GH; Wang ZG 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 GALLIUM NITRIDE  LUMINESCENCE  BULK