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| Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles 期刊论文
applied surface science, 2016, 卷号: 388, 页码: 584-588
H.L. Kang; J.B. Lao; Z.P. Li; W.Q. Yao; C. Liu; J.Y. Wang
  收藏 | 浏览/下载：21/0 | 提交时间：2017/03/10 |
| Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD 期刊论文
microelectronics journal, 2006, 卷号: 37, 期号: 7, 页码: 583-585
Ran JX; Wang XL; Hu GX; Wang JX; Li JP; Wang CM; Zeng YP; Li JM
收藏 | 浏览/下载：53/0 | 提交时间：2010/04/11
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| Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing 期刊论文
semiconductor science and technology, 2004, 卷号: 19, 期号: 5, 页码: 571-573
Yi WB; Zhang EX; Chen M; Li N; Zhang GQ; Liu ZL; Wang X
收藏 | 浏览/下载：179/57 | 提交时间：2010/03/09
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| Study on pollution for the photoelectronic material InP 期刊论文
spectroscopy and spectral analysis, 2002, 卷号: 22, 期号: 4, 页码: 550-551
Xu JC; Ding XP; Chen DQ
收藏 | 浏览/下载：40/0 | 提交时间：2010/08/12
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| Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors 期刊论文
journal of crystal growth, 2002, 卷号: 236, 期号: 4, 页码: 516-522
Wei X; Wang GH; Zhang GZ; Zhu XP; Ma XY; Chen LH
收藏 | 浏览/下载：81/2 | 提交时间：2010/08/12
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| Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 4, 页码: 489-493
Gao F; Huang DD; Li JP; Kong MY; Sun DZ; Li JM; Zeng YP; Lin LY
收藏 | 浏览/下载：149/5 | 提交时间：2010/08/12
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| The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 220, 期号: 4, 页码: 457-460
Gao F; Huang DD; Li JP; Lin YX; Kong MY; Li JM; Zeng YP; Lin LY
收藏 | 浏览/下载：89/0 | 提交时间：2010/08/12
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| Rapid thermal annealing of arsenic implanted Si1-xGex epilayers 期刊论文
nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1997, 卷号: 122, 期号: 4, 页码: 639-642
Zou LF; Wang ZG; Sun DZ; Fan TW; Liu XF; Zhang JW
收藏 | 浏览/下载：12/0 | 提交时间：2010/11/17
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| Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment 期刊论文
journal of crystal growth, 1996, 卷号: 169, 期号: 4, 页码: 637-642
Lu LW; Feng SL; Liang JB; Wang ZG; Wang J; Wang Y; Ge WK
收藏 | 浏览/下载：10/0 | 提交时间：2010/11/17
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| Microstructure studies of PdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing 期刊论文
applied surface science, 1996, 卷号: 100, 期号: 0, 页码: 530-533
Chen WD; Xie XL; Cui YD; Chen CH; Hsu CC
收藏 | 浏览/下载：13/0 | 提交时间：2010/11/17
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