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CORC

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Semiconductor nanochannels in metallic carbon nanotubes by thermomechanical chirality alteration 期刊论文
SCIENCE, 2021, 卷号: 374, 期号: 6575, 页码: 1616-+
作者:  Tang, Dai-Ming;  Erohin, Sergey, V;  Kvashnin, Dmitry G.;  Demin, Victor A.;  Cretu, Ovidiu
收藏  |  浏览/下载：18/0  |  提交时间：2022/07/01
A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design 会议论文
Guilin, China, June 4-6, 2021
作者:  Cheng H(程贺);  Zhang C(张超);  Liu TF(刘铁锋);  Xie C(谢闯);  Yang ZJ(杨志家)
收藏  |  浏览/下载：11/0  |  提交时间：2022/02/04
Naphthalene diimide based near-infrared luminogens with aggregation-induced emission characteristics for biological imaging and high mobility ambipolar transistors 期刊论文
SCIENCE CHINA-CHEMISTRY, 2020, 页码: 10
作者:  Guo, De;  Li, Lin;  Zhu, Xianqi;  Heeney, Martin;  Li, Jing
收藏  |  浏览/下载：21/0  |  提交时间：2020/08/24
Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate 期刊论文
INTERNATIONAL JOURNAL OF NANOMEDICINE, 2020, 卷号: 15, 页码: 6239-6245
作者:  Qi, Shaocheng;  Hu, Yongbin;  Dai, Chaoqi;  Chen, Peiqin;  Wu, Zhendong
收藏  |  浏览/下载：13/0  |  提交时间：2020/12/16
Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:  Cheng H(程贺);  Liu TF(刘铁锋);  Zhang C(张超);  Liu ZF(刘志峰);  Yang ZJ(杨志家)
收藏  |  浏览/下载：15/0  |  提交时间：2020/07/11
Analytic Compact Model of Short-channel Cylindrical ballistic GAA MOSFET Including SDT effect 会议论文
Zhangjiajie, China, April 24-26, 2020
作者:  Cheng H(程贺);  Zhang C(张超);  Liu TF(刘铁锋);  Yang ZJ(杨志家);  Zhang ZP(张志鹏)
收藏  |  浏览/下载：7/0  |  提交时间：2020/08/01
Flexible ultra-short channel organic ferroelectric non-volatile memory transistors 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 卷号: 7, 页码: 998-1005
作者:  Li, Enlong;  Wu, Xiaomin;  Lan, Shuqiong;  Yang, Qian;  Fang, Yuan
收藏  |  浏览/下载：7/0  |  提交时间：2019/11/21
Short channel monolayer MoS2 field-effect transistors defined by SiO x nanofins down to 20 nm 期刊论文
Nanotechnology, 2019, 卷号: Vol.30 No.29
作者:  Bi, Kaixi;  Liu, Huaizhi;  Chen, Yiqin;  Luo, Fang;  Shu, Zhiwen
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/13
Short channel monolayer MoS field-effect transistors defined by SiO nanofins down to 20 nm 期刊论文
Nanotechnology, 2019, 卷号: Vol.30 No.29, 页码: 295301
作者:  Kaixi Bi;  Huaizhi Liu;  Yiqin Chen;  Fang Luo;  Zhiwen Shu
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/13
Short channel monolayer MoS2 field-effect transistors defined by SiO x nanofins down to 20 nm. 期刊论文
Nanotechnology, 2019, 卷号: Vol.30 No.29, 页码: 295301
作者:  Kaixi Bi;  Huaizhi Liu;  Yiqin Chen;  Fang Luo;  Zhiwen Shu
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17

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