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Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2 期刊论文
NANO LETTERS, 2021, 卷号: 21
作者:  Tan, Cheng;  Xie, Wen-Qiang;  Zheng, Guolin;  Aloufi, Nuriyah;  Albarakati, Sultan
收藏  |  浏览/下载：33/0  |  提交时间：2021/08/30
A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design 会议论文
Guilin, China, June 4-6, 2021
作者:  Cheng H(程贺);  Zhang C(张超);  Liu TF(刘铁锋);  Xie C(谢闯);  Yang ZJ(杨志家)
收藏  |  浏览/下载：11/0  |  提交时间：2022/02/04
Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:  Cheng H(程贺);  Liu TF(刘铁锋);  Zhang C(张超);  Liu ZF(刘志峰);  Yang ZJ(杨志家)
收藏  |  浏览/下载：15/0  |  提交时间：2020/07/11
Analytic Compact Model of Short-channel Cylindrical ballistic GAA MOSFET Including SDT effect 会议论文
Zhangjiajie, China, April 24-26, 2020
作者:  Cheng H(程贺);  Zhang C(张超);  Liu TF(刘铁锋);  Yang ZJ(杨志家);  Zhang ZP(张志鹏)
收藏  |  浏览/下载：7/0  |  提交时间：2020/08/01
Positive Bias Temperature Instabilities in Vertical Gate-all-around poly-Si Nanowire Field-effect Transistors 会议论文
1st IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018, November 21, 2018 - November 23, 2018
作者:  Yang, Wenjing;  Li, Yuan;  Wang, Bo;  Qian, He;  Chen, Jiezhi
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang YM(杨育梅)
收藏  |  浏览/下载：6/0  |  提交时间：2020/11/13
Compact Model of Short-channel Cylindrical ballistic Gate-All-Around MOSFET Including the Source-to-drain Tunneling 会议论文
Male, Maldives, March 6-8, 2018
作者:  Liu ZF(刘志峰);  Yang ZJ(杨志家);  Cheng H(程贺);  Zhang ZP(张志鹏)
收藏  |  浏览/下载：38/0  |  提交时间：2018/07/01
Efficient ab initio analysis of quantum confinement and band structure effects in ultra-scaled Si1-xGex gate-all-around and fin field-effect transistors for sub-10 nm technology nodes 期刊论文
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 卷号: Vol.17 No.4, 页码: 1399-1409
作者:  Liu, J;  Tang, CX;  Mo, PH;  Lu, JW
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/26
Efficient ab initio analysis of quantum confinement and band structure effects in ultra-scaled Si1?xGex gate-all-around and fin field-effect transistors for sub-10?nm technology nodes 期刊论文
Journal of Computational Electronics, 2018, 卷号: Vol.17 No.4, 页码: 1399-1409
作者:  Liu, Jie;  Tang, Chuanxiang;  Mo, Pinghui;  Lu, Jiwu
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/26
Positive Bias Temperature Instabilities in Vertical Gate-all-around poly-Si Nanowire Field-effect Transistors 会议论文
IEEE International Conference on Integrated Circuits, Technologies and Applications (IEEE ICTA), NOV 21-23, 2018
作者:  Yang, Wenjing;  Li, Yuan;  Wang, Bo;  Qian, He;  Chen, Jiezhi
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/31

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