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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：微电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文 acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104 作者:  Yu F 收藏  |  浏览/下载：93/6  |  提交时间：2011/07/06 separation by oxygen implantation  buried oxide  nitrogen implantation  positive charge density  RADIATION HARDNESS  IMPLANTING NITROGEN  ION-IMPLANTATION  IMPROVEMENT  TECHNOLOGY  OXYGEN  LAYER   A VSLMS Style Tap-length Learning Algorithm for Structure Adaptation 会议论文 11th ieee singapore international conference on communication systems, guangzhou, peoples r china, nov 19-21, 2008 Yu, HM; Liu, ZL; Li, GS 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 Adaptive Filter  equalizer  structure adaptive  fractional tap-length   A novel low-power input-independent MOS AC/DC charge pump 会议论文 ieee international symposium on circuits and systems (iscas), kobe, japan, may 23-26, 2005 Yao, Y; Shi, Y; Dai, FF 收藏  |  浏览/下载：346/81  |  提交时间：2010/03/29 Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation 期刊论文 journal of electronic materials, 2005, 卷号: 34, 期号: 11, 页码: l53-l56 Zhang EX; Sun JY; Chen J; Zhang ZX; Wang X; Li N; Zhang GQ; Liu ZL 收藏  |  浏览/下载：193/29  |  提交时间：2010/03/17 silicon-on-insulator (SOI)   A study on the realization of radio frequency energy AC/DC charge pump based on MOS FET 期刊论文 acta physica sinica, 2005, 卷号: 54, 期号: 5, 页码: 2424-2428 Yuan Y; Yin S 收藏  |  浏览/下载：34/19  |  提交时间：2010/03/17 charge pump