CORC

在结果中检索

CORC

浏览/检索结果: 共18条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Polymerization of ionic liquid-based microemulsions: A versatile method for the synthesis of polymer electrolytes 期刊论文
macromolecules, 2008, 卷号: 41, 期号: 10, 页码: 3389-3392
Yu, SM; Yan, F; Zhang, XW; You, JB; Wu, PY; Lu, JM; Xu, QF; Xia, XW; Ma, GL
收藏  |  浏览/下载：65/1  |  提交时间：2010/03/08
Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD 期刊论文
modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Luo, MC; Li, JM
收藏  |  浏览/下载：42/0  |  提交时间：2010/03/08
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 31-35
Zhao C (Zhao C.); Chen YH (Chen Y. H.); Zhao M (Zhao Man); Zhang CL (Zhang C. L.); Xu B (Xu B.); Yu LK (Yu L. K.); Sun J (Sun J.); Lei W (Lei W.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
作者:  Xu B
收藏  |  浏览/下载：134/15  |  提交时间：2010/03/29
Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate 期刊论文
semiconductor science and technology, 2003, 卷号: 18, 期号: 11, 页码: 955-959
作者:  Xu B
收藏  |  浏览/下载：73/0  |  提交时间：2010/08/12
Thermodynamics and kinetics analysis of in-situ synthesizing AlN 期刊论文
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 249-254
Zheng XH; Wang Q; Zhou ML; Li CG
收藏  |  浏览/下载：35/0  |  提交时间：2010/08/12
Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate 期刊论文
journal of crystal growth, 2000, 卷号: 219, 期号: 1-2, 页码: 17-21
作者:  Ye XL;  Xu B
收藏  |  浏览/下载：35/0  |  提交时间：2010/08/12
Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 322-326
Liu JP; Huang DD; Li JP; Lin YX; Sun DZ; Kong MY
收藏  |  浏览/下载：70/14  |  提交时间：2010/08/12
Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells 期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 4, 页码: 355-359
Zhang MH; Han YJ; Zhang YH; Huang Q; Bao CL; Wang WX; Zhou JM; Lu LW
收藏  |  浏览/下载：66/0  |  提交时间：2010/08/12
A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4 期刊论文
journal of crystal growth, 2000, 卷号: 218, 期号: 2-4, 页码: 245-249
Yu Z; Li DZ; Cheng BW; Huang CJ; Lei ZL; Yu JZ; Wang QM; Liang JW
收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12

©版权所有 ©2017 CSpace - Powered by CSpace