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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A10 Gb/s 1.5 μm Widely Tunable Directly Modulated InGaAsP/InP DBR Laser 期刊论文 CHINESE PHYSICS LETTERS, 2020, 卷号: 37, 期号: 6, 页码: 064201 作者:  Dai-Bing Zhou ;   Song Liang;   Yi-Ming He ;   Yun-Long Liu ;   Wu Zhao ;   Dan Lu ;   Ling-Juan Zhao ;   Wei Wang 收藏  |  浏览/下载：9/0  |  提交时间：2021/06/17 Dielectric and barrier thickness fluctuation scattering in Al2O3AlGaNGaN double 期刊论文 thin solid films, 2013, 卷号: 534, 页码: 655–658 Dong Jia, Yanwu Lu , Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang 收藏  |  浏览/下载：19/0  |  提交时间：2014/03/18 Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文 solid state communications, 2013, 卷号: 153, 期号: 1, 页码: 53-57 Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：27/0  |  提交时间：2013/10/10 Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文 thin solid films, 2013, 卷号: 534, 页码: 655–658 Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang 收藏  |  浏览/下载：17/0  |  提交时间：2014/05/08 Reduction of Efficiency Droop and Modification of Polarization Fields of InGaN-Based Green Light-Emitting Diodes via Mg-Doping in the Barriers 期刊论文 chinese physics letters, 2013, 卷号: 30, 期号: 8, 页码: 087101 ZHANG Ning, LIU Zhe, SI Zhao, REN Peng, WANG Xiao-Dong, FENG Xiang-Xu, DONG Peng, DU Cheng-Xiao, ZHU Shao-Xin, FU Bing-Lei, LU Hong-Xi, LI Jin-Min, WANG Jun-Xi 收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09 Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文 thin solid films, 2013, 卷号: 534, 页码: 655-658 Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：23/0  |  提交时间：2013/08/27 Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors 期刊论文 journal of applied physics, 2012, 卷号: 112, 页码: 024515 Ji, Dong; Lu, Yanwu; Liu, Bing; Jin, Guangri; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：14/0  |  提交时间：2013/05/07 Polarization-induced remote interfacial charge scattering in Al 2O3/AlGaN/GaN double heterojunction high electron mobility transistors 期刊论文 applied physics letters, 2012, 卷号: 100, 期号: 13, 页码: 132105 Ji, Dong; Liu, Bing; Lu, Yanwu; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：16/0  |  提交时间：2013/05/13 The structure and current-voltage characteristics of multi-sheet ingan quantum dots grown by a new multi-step method 期刊论文 Journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 19-24 作者:  Chen, Z;  Lu, DC;  Han, P;  Liu, XL;  Wang, XH 收藏  |  浏览/下载：9/0  |  提交时间：2019/05/12 Nanostructures  Metalorganic chemical vapor deposition  Nitrides   The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method 期刊论文 journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 19-24 Chen Z; Lu DC; Han P; Liu XL; Wang XH; Li YF; Yuan HR; Lu Y; Bing LD; Zhu QS; Wang ZG; Wang XF; Yan L 收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12 nanostructures  metalorganic chemical vapor deposition  nitrides  SELF-ORGANIZED GROWTH  EPITAXIAL-GROWTH  GAAS  GAN  PHOTOLUMINESCENCE  SURFACTANT  ALGAAS  WIRE