×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
新疆理化技术研究所 [10]
内容类型
期刊论文 [10]
发表日期
2021 [1]
2020 [1]
2018 [2]
2017 [1]
2015 [3]
2014 [1]
更多...
学科主题
Physics [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共10条,第1-10条
帮助
限定条件
专题:新疆理化技术研究所
第一署名单位
第一作者单位
通讯作者单位
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 8, 页码: 1565-1570
作者:
Ren, ZX (Ren, Zhexuan)
;
1An, X (An, Xia) 1
;
Li, GS (Li, Gensong) 1
;
Liu, JY (Liu, Jingyi) 1
;
Xun, MZ (Xun, Mingzhu) 2
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2021/09/22
65 nmhot-carrier injection (HCI)layout-dependent effect (LDE)nMOSstressthreshold voltagetotal ionizing dose (TID)
TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1320-1325
作者:
Ren, ZX (Ren, Zhexuan)[ 1 ]
;
An, X (An, Xia)[ 1 ]
;
Li, GS (Li, Gensong)[ 1 ]
;
Chen, G (Chen, Gong)[ 1 ]
;
Li, M (Li, Ming)[ 1 ]
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2020/09/09
Bulk Si FinFET
fin width
orientation
PMOS
threshold voltage shift
total ionizing dose (TID)
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
作者:
Zhang, JX (Zhang, Jin-Xin)[ 1 ]
;
Guo, HX (Guo, Hong-Xia)[ 2,3 ]
;
Pan, XY (Pan, Xiao-Yu)[ 3 ]
;
Guo, Q (Guo, Qi)[ 2 ]
;
Zhang, FQ (Zhang, Feng-Qi)[ 3 ]
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2018/11/20
Sige Hbt
Synergistic Effect
Single Event Effects
Total Ionizing Dose
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases
期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
作者:
Zhang, JX (Zhang, Jin-xin)
;
Guo, Q (Guo, Qi)
;
Guo, HX (Guo, Hong-xia)
;
Lu, W (Lu, Wu)
;
He, CH (He, Chao-hui)
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2018/06/20
Eldrs
Sige Hbt
Gamma Irradiation
Bias Conditions
An investigation of ionizing radiation damage in different SiGe processes
期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
作者:
Li, P (Li, Pei)
;
Liu, MH (Liu, Mo-Han)
;
He, CH (He, Chao-Hui)
;
Guo, HX (Guo, Hong-Xia)
;
Zhang, JX (Zhang, Jin-Xin)
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2017/12/11
Different Silicon-germanium Process
Ionizing Radiation Damage
Numerical Simulation
Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors
期刊论文
CHINESE PHYSICS LETTERS, 2015, 卷号: 32, 期号: 8
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Zhang, JX (Zhang Jin-Xin)
;
Wei, Y (Wei Ying)
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2018/01/25
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment
期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Zhang, JX (Zhang Jin-Xin)
;
Xiao, Y (Xiao Yao)
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2017/09/14
SiGe heterojunction bipolar transistor
single event effect
three-dimensional numerical simulation
laser microbeam experiment
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor
期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
作者:
Li, P (Li Pei)
;
Guo, HX (Guo Hong-Xia)
;
Guo, Q (Guo Qi)
;
Wen, L (Wen Lin)
;
Cui, JW (Cui Jiang-Wei)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2015/07/11
SiGe heterojunction bipolar transistor
single event effect
hardening design
dummy collector
Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor
期刊论文
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24
作者:
Zhang, JX (Zhang Jin-Xin)
;
He, CH (He Chao-Hui)
;
Guo, HX (Guo Hong-Xia)
;
Tang, D (Tang Du)
;
Xiong, C (Xiong Cen)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2018/02/01
Sige Heterojunction Bipolar Transistor
Different Bias
Single Event Effect
3d Numerical Simulation
3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor
期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 4, 页码: -
作者:
Zhang Jin-Xin
;
Guo Hong-Xia
;
Guo Qi
;
Wen Lin
;
Cui Jiang-Wei
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2013/11/07
SiGe heterojunction bipolar transistor
single event effect
charge collection
three-dimensional numerical simulation
©版权所有 ©2017 CSpace - Powered by
CSpace